LED with a current confinement structure aligned with a contact
First Claim
1. A light emitting diode (LED), comprising:
- a base LED structure comprising;
a first doped layer with an associated first contact;
a second doped layer;
an active region between said first and second doped layers;
a current confinement layer positioned adjacent to said second doped layer and axially aligned with said first contact, said current confinement layer including a first face that faces said first contact, a second face that is opposite said first face and at least one sidewall that extends between said first face and said second face;
a second contact on said second doped layer; and
a roughened surface of said light emitting diode;
wherein said second contact extends onto said second face of said current confinement layer that is opposite said first face.
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Accused Products
Abstract
An LED having a p-type layer of material with an associated p-contact, an n-type layer of material with an associated n-contact and an active region between the p-type layer and the n-type layer, includes a confinement structure that is formed within one of the p-type layer of material and the n-type layer of material. The confinement structure is generally aligned with the contact on the top and primary emission surface of the LED and substantially prevents the emission of light from the area of the active region that is coincident with the area of the confinement structure and the top-surface contact. The LED may include a roughened emitting-side surface to further enhance light extraction.
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Citations
33 Claims
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1. A light emitting diode (LED), comprising:
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a base LED structure comprising; a first doped layer with an associated first contact; a second doped layer; an active region between said first and second doped layers; a current confinement layer positioned adjacent to said second doped layer and axially aligned with said first contact, said current confinement layer including a first face that faces said first contact, a second face that is opposite said first face and at least one sidewall that extends between said first face and said second face; a second contact on said second doped layer; and a roughened surface of said light emitting diode; wherein said second contact extends onto said second face of said current confinement layer that is opposite said first face. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 22, 23, 24, 25, 30, 31)
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12. A light emitting diode (LED), comprising:
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a first doped layer; a second doped layer; an active region between said first and second doped layers; a first contact on and covering less than all of said first doped layer; an insulating current confinement layer on and covering less than all of said second doped layer and substantially preventing emission from said active region below said first contact, said insulating current layer including a first face that faces said first contact, a second face that is opposite said first face and at least one sidewall that extends between said first face and said second face; a second contact on said second doped layer; and a roughened surface of said light emitting diode; wherein said second contact extends onto said second face of said current confinement layer that is opposite said first face. - View Dependent Claims (13, 14, 15, 16, 17, 18, 19, 20, 21, 26, 27, 28, 29, 32, 33)
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Specification