High efficiency light emitting diode

• US 8,410,506 B2
• Filed: 03/31/2011
• Issued: 04/02/2013
• Est. Priority Date: 03/22/2010
• Status: Active Grant

• Current Assignee: Seoul Viosys Co., Ltd. (Seoul Semiconductor Co., Ltd.)
• Original Assignee: Seoul Optodevice Company Limited (Seoul Semiconductor Co., Ltd.)
• Inventors: Kim, Chang Youn, Lee, Joon Hee, You, Jong Kyun, Lim, Hong Chol
• Primary Examiner(s): GEBREMARIAM, SAMUEL A
• Application Number:
  US13/077,371
• Publication Number:
  US 20110227114A1
• Time in Patent Office: 733 Days
• Field of Search: 257 98-100
• US Class Current: 257/98
• CPC Class Codes: H01L 33/20 with a particular shape, e.g. curved or truncated substrate
• CPC Class Codes: H01L 33/22 Roughened surfaces, e.g. at the interface between epitaxial layers
• CPC Class Codes: H01L 33/382 the electrode extending partially in or entirely through the semiconductor body

Abstract

Provided is a high-efficiency light emitting diode (LED) that includes: a support substrate; a semiconductor stack positioned on the support substrate, the semiconductor stack including a p-type compound semiconductor layer, an active layer, and an n-type compound semiconductor layer; a first electrode positioned between the support substrate and the semiconductor stack and in ohmic contact with the semiconductor stack; a first bonding pad positioned on a portion of the first electrode that is exposed outside of the semiconductor stack; and a second electrode positioned on the semiconductor stack. Protrusions are formed on exposed surfaces of the semiconductor stack. In addition, the second electrode may be positioned between the first electrode and the support substrate and contacted with the n-type compound semiconductor layer through openings of the semiconductor stack.

Claims

1. A light emitting diode (LED), comprising:

a semiconductor stack disposed on a substrate, the semiconductor stack comprising;

a roughened upper surface;

a first compound semiconductor layer;

a second compound semiconductor layer;

an active layer disposed between the first compound semiconductor layer and the second compound semiconductor layer; and

openings that extend through the first compound semiconductor layer and the active layer, and expose a portion of the second compound semiconductor layer;

an insulating layer disposed on the substrate and contacting sidewalls of the openings;

a second electrode disposed on the substrate and electrically connected to the second compound semiconductor layer; and

a bonding pad contacting a portion of the second electrode that extends outside of the semiconductor stack.

2. The LED of claim 1, wherein the insulating layer is disposed between portions of the-first electrode, such that the first compound semiconductor layer and the first electrode have multiple points of contact.

3. The LED of claim 1, wherein the insulating layer comprises a reflective material.

4. The LED of claim 1, wherein the insulating layer comprises at least two layers selected from Si_xO_yN_z, Ti_xO_y, Ta_xO_y, and Nb_xO_y layers.

5. The LED of claim 1, wherein the insulating layer comprises at least one element selected from Si, Ti, Ta, Nb, In, and Sn.

6. The LED of claim 1, wherein the support substrate is conductive.

7. The LED of claim 1, further comprising a bonding metal disposed between the second electrode and the support substrate.

8. The LED of claim 1, wherein the openings are frusto-conical.

9. The LED of claim 1, wherein the openings extend into the second compound semiconductor layer without extending through the second compound semiconductor layer.

10. The LED of claim 1, wherein the second electrode is electrically connected to the second compound semiconductor layer via the openings.

11. The LED of claim 1, further comprising a first electrode disposed on the insulating layer and contacting the first compound semiconductor layer.

12. The LED of claim 11, further comprising another bonding pad contacting a portion of the first electrode that extends outside of the semiconductor stack.

13. The LED of claim 11, wherein the first electrode comprises at least one element selected from Ni/Au, ITO, and ZnO.

14. The LED of claim 11, wherein the first electrode is mesh-shaped.

15. A light emitting diode (LED), comprising:

a semiconductor stack disposed on a support substrate, the semiconductor stack comprising;

a roughened upper surface;

a first compound semiconductor layer;

a second compound semiconductor layer;

an active layer disposed between the first compound semiconductor layer and the second compound semiconductor layer; and

openings that extend through the first compound semiconductor layer and the active layer and only partially through the second compound semiconductor layer, the openings exposing a portion of the second compound semiconductor layer;

an insulating layer disposed on the substrate and contacting sidewalls of the openings;

a first electrode disposed on the insulating layer and contacting the first compound semiconductor layer; and

a second electrode disposed on the insulating layer and electrically connected to the second compound semiconductor layer.

16. The LED of claim 15, wherein the insulating layer comprises a reflective material.

17. The LED of claim 15, wherein the second electrode is electrically connected to the second compound semiconductor layer via the openings.