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High efficiency light emitting diode

  • US 8,410,506 B2
  • Filed: 03/31/2011
  • Issued: 04/02/2013
  • Est. Priority Date: 03/22/2010
  • Status: Active Grant
First Claim
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1. A light emitting diode (LED), comprising:

  • a semiconductor stack disposed on a substrate, the semiconductor stack comprising;

    a roughened upper surface;

    a first compound semiconductor layer;

    a second compound semiconductor layer;

    an active layer disposed between the first compound semiconductor layer and the second compound semiconductor layer; and

    openings that extend through the first compound semiconductor layer and the active layer, and expose a portion of the second compound semiconductor layer;

    an insulating layer disposed on the substrate and contacting sidewalls of the openings;

    a second electrode disposed on the substrate and electrically connected to the second compound semiconductor layer; and

    a bonding pad contacting a portion of the second electrode that extends outside of the semiconductor stack.

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