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Semiconductor light emitting device and method for fabricating the same

  • US 8,410,510 B2
  • Filed: 07/02/2008
  • Issued: 04/02/2013
  • Est. Priority Date: 07/03/2007
  • Status: Active Grant
First Claim
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1. A semiconductor light emitting device, comprising:

  • a semiconductor light emitting portion that includes,a first conductivity-type semiconductor layer;

    a second conductivity-type semiconductor layer; and

    a light emitting layer which is disposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer;

    a first electrode connected to the first conductivity-type semiconductor layer; and

    a second electrode directly connected to the second conductivity-type semiconductor layer;

    wherein,the second electrode is separated from an insulator film covering the semiconductor light emitting portion by a separation area; and

    a first portion of the insulator film is surrounded by the second electrode, with a first portion of the separation area arranged between the first portion of the insulator film and the second electrode.

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