Semiconductor light emitting device and method for fabricating the same

• US 8,410,510 B2
• Filed: 07/02/2008
• Issued: 04/02/2013
• Est. Priority Date: 07/03/2007
• Status: Active Grant

• Current Assignee: Nichia Corporation
• Original Assignee: Nichia Corporation
• Inventors: Matsumura, Hiroaki
• Primary Examiner(s): Hoffberg, Robert J
• Assistant Examiner(s): Anya, Igwe U
• Application Number:
  US12/166,940
• Publication Number:
  US 20090008668A1
• Time in Patent Office: 1,735 Days
• Field of Search: 257/79, 257/99
• US Class Current: 257/99
• CPC Class Codes: H01L 33/0093 Wafer bonding; Removal of the growth substrate
• CPC Class Codes: H01L 33/20 with a particular shape, e.g. curved or truncated substrate
• CPC Class Codes: H01L 33/387 with a plurality of electrode regions in direct contact with the semiconductor body and being electrically interconnected by another electrode layer
• CPC Class Codes: H01L 33/40 Materials therefor
• CPC Class Codes: H01L 33/44 characterised by the coatings, e.g. passivation layer or anti-reflective coating

Abstract

A semiconductor light emitting device, which includes: a first conductivity-type semiconductor layer; a second conductivity-type semiconductor layer; a semiconductor light emitting portion having a light emitting layer which is disposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer; a first conductivity-type semiconductor side electrode connected to the first conductivity-type semiconductor layer; and a second conductivity-type semiconductor side electrode connected to the second conductivity-type semiconductor layer, wherein the second conductivity-type semiconductor side electrode is disposed separated from an insulator film covering the semiconductor light emitting portion by a separation area.

Claims

1. A semiconductor light emitting device, comprising:

a semiconductor light emitting portion that includes,

a first conductivity-type semiconductor layer;

a second conductivity-type semiconductor layer; and

a light emitting layer which is disposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer;

a first electrode connected to the first conductivity-type semiconductor layer; and

a second electrode directly connected to the second conductivity-type semiconductor layer;

wherein,

the second electrode is separated from an insulator film covering the semiconductor light emitting portion by a separation area; and

a first portion of the insulator film is surrounded by the second electrode, with a first portion of the separation area arranged between the first portion of the insulator film and the second electrode.

2. The semiconductor light emitting device according to claim 1, wherein:

a continuous layer made of metal or alloy materials is disposed on outer sides of the second electrode and the insulator film; and

the separation area comprises one of a space, and a layer made of the metal or alloy materials that is disposed in the separation area.

3. The semiconductor light emitting device according to claim 1, wherein a substrate is disposed on the outer sides of the second electrode and the insulator film.

4. The semiconductor light emitting device according to claim 1, wherein:

the light emitting layer is disposed between the first electrode and the second electrode, the first electrode is disposed across the first conductivity-type semiconductor layer from the light emitting layer, and the second electrode is disposed across the second conductivity-type semiconductor layer from the light emitting layer; and

the first and second electrodes are alternately disposed in a plane view of the semiconductor light emitting portion.

5. The semiconductor light emitting device according to claim 1, wherein an area of the second electrode is larger than an area of the first electrode, in a plane view of the semiconductor light emitting portion.

6. The semiconductor light emitting device according to claim 1, wherein the second electrode is made of a light reflecting metal material.

7. The semiconductor light emitting device according to claim 6, wherein the light reflecting metal material is at least one selected from a group of Ag, Al, and Rh.

8. The semiconductor light emitting device according to claim 1, wherein an outer periphery of the second electrode is further surrounded by the insulator film, through another separation area.

9. A semiconductor light emitting device, comprising:

a semiconductor light emitting portion that includes,

a first conductivity-type semiconductor layer;

a second conductivity-type semiconductor layer;

a light emitting layer which is disposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer;

a first electrode connected to the first conductivity-type semiconductor layer; and

a second electrode directly connected to the second conductivity-type semiconductor layer;

wherein,

the second electrode is separated from an insulator film covering the semiconductor light emitting portion by a separation area;

a first portion of the insulator film is surrounded by the second electrode, with a first portion of the separation area arranged between the first portion of the insulator film and the second electrode;

an outer periphery of the second electrode is further surrounded by a second portion of the insulator film, with a second portion of the separation area arranged between the outer periphery of the second electrode and the second portion of the insulator film;

the semiconductor light emitting portion is disposed between the first and second electrodes;

the first electrode is disposed across the first conductivity-type semiconductor layer from the light emitting layer;

the second electrode is disposed across the second conductivity-type semiconductor layer from the light emitting layer; and

the first and second electrodes are alternately disposed, in a plane view of the semiconductor light emitting portion.

10. The semiconductor light emitting device according to claim 9, wherein an area of the second electrode is larger than an area of the first electrode, in the plane view of the semiconductor light emitting portion.

11. The semiconductor light emitting device according to claim 10, wherein:

the second electrode is made of a light reflecting metal material; and

the light reflecting metal material comprises at least one metal selected from the group consisting of Ag, Al, and Rh.

12. A semiconductor light emitting device, comprising:

a semiconductor light emitting portion that includes,

a first conductivity-type semiconductor layer;

a second conductivity-type semiconductor layer;

a light emitting layer which is disposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer;

a first electrode connected to the first conductivity-type semiconductor layer; and

a second electrode directly connected to the second conductivity-type semiconductor layer;

wherein,

the second electrode is separated from an insulator film covering the semiconductor light emitting portion by a separation area;

a first portion of the insulator film is surrounded by the second electrode, with a first portion of the separation area arranged between the first portion of the insulator film and the second electrode;

a continuous layer made of metal or alloy materials is disposed on outer sides of the second electrode and the insulator film;

the separation area comprises one of a space, and a layer made of the metal or alloy material that is disposed in the separation area;

a substrate is disposed on the outer sides of the second electrode and the insulator film;

the semiconductor light emitting portion is disposed between the first and second electrodes;

the first electrode is disposed across the first conductivity-type semiconductor layer from the light emitting layer;

the second electrode is disposed across the second conductivity-type semiconductor layer from the light emitting layer; and

the first and second electrodes are alternately disposed, in a plane view of the semiconductor light emitting portion.

13. The semiconductor light emitting device according to claim 12, wherein an area of the second electrode is larger than an area of the first electrode, in the plane view of the semiconductor light emitting portion.

14. The semiconductor light emitting device according to claim 13, wherein:

the second electrode is made of a light reflecting metal material; and

the light reflecting metal material comprises at least one metal selected from the group consisting of AG, Al, and Rh.

15. The semiconductor light emitting device according to claim 14, wherein an outer periphery of the second electrode is further surrounded by a second portion of the insulator film, with a second portion of the separation area arranged between the outer periphery of the second electrode and the second portion of the insulator film.

16. The semiconductor light emitting device according to claim 12, wherein an outer periphery of the second electrode is further surrounded by a second portion of the insulator film, with a second portion of the separation area arranged between the outer periphery of the second electrode and the second portion of the insulator film.

17. The semiconductor light emitting device according to claim 16, wherein an area of the second electrode is larger than an area of the first electrode, in the plane view of the semiconductor light emitting portion.