High voltage semiconductor devices and methods of forming the same
First Claim
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1. A method of fabricating a semiconductor device, the method comprising:
- forming first trenches in an insulating material, wherein forming first trenches comprises;
forming a second dielectric over a first dielectric, the first dielectric comprising a plurality of dielectric layers or a single dielectric layer, andforming the first trenches in the second dielectric;
forming a trap region in the insulating material by introducing an impurity into the first trenches; and
filling the first trenches with a conductive material.
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Abstract
High voltage semiconductor devices and methods of fabrication thereof are described. In one embodiment, a method of forming a semiconductor device includes forming first trenches in an insulating material. A trap region is formed in the insulating material by introducing an impurity into the first trenches. The first trenches are filled with a conductive material.
16 Citations
34 Claims
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1. A method of fabricating a semiconductor device, the method comprising:
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forming first trenches in an insulating material, wherein forming first trenches comprises; forming a second dielectric over a first dielectric, the first dielectric comprising a plurality of dielectric layers or a single dielectric layer, and forming the first trenches in the second dielectric; forming a trap region in the insulating material by introducing an impurity into the first trenches; and filling the first trenches with a conductive material. - View Dependent Claims (2, 3, 6, 7, 8, 9, 14)
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4. A method of fabricating a semiconductor device, the method comprising:
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forming first trenches in an insulating material; forming a trap region in the insulating material by introducing an impurity into the first trenches; filling the first trenches with a conductive material; forming second trenches in the insulating material, the second trenches being formed under the first trenches and being separated by a portion of the insulating material; and filling the second trenches with the conductive material. - View Dependent Claims (5)
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10. A method of fabricating a semiconductor device, the method comprising:
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forming first trenches in an insulating material; forming a trap region in the insulating material by introducing an impurity into the first trenches, wherein introducing an impurity into the first trenches comprises implanting the impurity into the first trenches; and filling the first trenches with a conductive material. - View Dependent Claims (11, 12, 13)
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15. A method of fabricating a semiconductor device, the method comprising:
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forming a first coil over a substrate; forming an insulating material above the first coil; forming trenches in the insulating material; forming trap regions in the insulating material by implanting an impurity into the trenches; and forming a second coil in the insulating material by filling the trenches with a conductive material. - View Dependent Claims (16, 17, 18, 19, 20, 21, 22, 23)
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24. A transformer comprising:
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a first coil overlying a semiconductor substrate; an insulation material disposed over the first coil; a second coil disposed in the insulation material; and a trap region comprising an impurity disposed under the second coil in the insulation material. - View Dependent Claims (25, 26, 27, 28)
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29. A method of fabricating a semiconductor device, the method comprising:
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forming first trenches in an insulating material; forming a trap region in the insulating material by introducing an impurity into the first trenches; and filling the first trenches with a conductive material, wherein the impurity comprises a material selected from the group consisting of silicon, germanium, carbon, boron, indium, gallium, phosphorus, arsenic, antimony, inert gas, and metal. - View Dependent Claims (30, 31, 32, 33, 34)
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Specification