Interposer-on-glass package structures

• US 8,411,459 B2
• Filed: 07/13/2010
• Issued: 04/02/2013
• Est. Priority Date: 06/10/2010
• Status: Active Grant

• Current Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Original Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Inventors: Yu, Chen-Hua, Lin, Jing-Cheng
• Primary Examiner(s): CHERVINSKY, BORIS LEO
• Application Number:
  US12/834,943
• Publication Number:
  US 20110304999A1
• Time in Patent Office: 994 Days
• Field of Search: None
• US Class Current: 361/783
• CPC Class Codes: H01L 21/76898 formed through a semiconductor substrate
• CPC Class Codes: H01L 2224/0401 Bonding areas specifically adapted for bump connectors, e.g. under bump metallisation [UBM]
• CPC Class Codes: H01L 2224/16225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/16227 the bump connector connecting to a bond pad of the item
• CPC Class Codes: H01L 2225/06517 Bump or bump-like direct electrical connections from device to substrate
• CPC Class Codes: H01L 2225/06548 Conductive via connections through the substrate, container, or encapsulation
• CPC Class Codes: H01L 2225/06572 Auxiliary carrier between devices, the carrier having an electrical connection structure
• CPC Class Codes: H01L 23/13 characterised by the shape
• CPC Class Codes: H01L 23/147 Semiconductor insulating substrates semiconductor conductive substrates H01L23/4926
• CPC Class Codes: H01L 23/15 Ceramic or glass substrates H01L23/142, H01L23/145, H01L23/147 take precedence
• CPC Class Codes: H01L 23/49816 Spherical bumps on the substrate for external connection, e.g. ball grid arrays [BGA]
• CPC Class Codes: H01L 23/49827 Via connections through the substrates, e.g. pins going through the substrate, coaxial cables H01L23/49822, H01L23/49833, H01L23/4985, H01L23/49861 take precedence
• CPC Class Codes: H01L 23/5384 Conductive vias through the substrate with or without pins, e.g. buried coaxial conductors H01L23/5383, H01L23/5385 take precedence; pins attached to insulating substrates H01L23/49811
• CPC Class Codes: H01L 23/5385 Assembly of a plurality of insulating substrates
• CPC Class Codes: H01L 23/5389 the chips being integrally enclosed by the interconnect and support structures
• CPC Class Codes: H01L 25/03 all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
• CPC Class Codes: H01L 25/0657 Stacked arrangements of devices
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/15311 being a ball array, e.g. BGA
• CPC Class Codes: H01L 2924/15321 being a ball array, e.g. BGA
• CPC Class Codes: Y10T 29/49124 : On flat or curved insulated base, e.g., printed circuit, etc.
• CPC Class Codes: Y10T 29/49165 : by forming conductive walled aperture in base

Abstract

A device includes an interposer including a substrate, and a first through-substrate via (TSV) penetrating through the substrate. A glass substrate is bonded to the interposer through a fusion bonding. The glass substrate includes a second TSV therein and electrically coupled to the first TSV.

Claims

1. A device comprising:

an interposer comprising;

a substrate; and

a first through-substrate via (TSV) penetrating through the substrate;

a glass substrate bonded to the interposer, wherein the glass substrate comprises a second TSV therein and electrically coupled to the first TSV;

a silicon nitride layer between the interposer and the glass substrate, wherein the silicon nitride layer contacts the substrate in the interposer; and

an oxide layer between the silicon nitride layer and the glass substrate.

2. The device of claim 1 further comprising:

a die bonded to the interposer, wherein the die and the glass substrate are on opposite sides of the interposer; and

a solder bump electrically coupled to the second TSV, wherein the solder bump and the interposer are on opposite sides of the glass substrate.

3. The device of claim 2 further comprising a printed circuit board (PCB) bonded to the solder bump.

4. The device of claim 1, wherein the glass substrate comprises a photo-sensitive glass layer, and a non-photo-sensitive glass layer bonded to the photo-sensitive glass layer.

5. The device of claim 4, wherein the non-photo-sensitive glass layer is between the photo-sensitive glass layer and the interposer.

6. The device of claim 1, wherein the interposer comprises a silicon substrate, and wherein no active device is formed in the interposer.

7. The device of claim 1 further comprising a redistribution line between the interposer and the glass substrate, wherein the redistribution line electrically couples the first TSV to the second TSV.

8. The device of claim 1, wherein the glass substrate comprises an opening, and wherein the device further comprises a die in the opening and bonded to the interposer.

9. The device of claim 8, wherein the opening penetrates through at least a portion of the glass substrate.

10. The device of claim 8, wherein the opening extends from a surface of the glass substrate facing the interposer into the glass substrate, and wherein the opening stops at an intermediate level in the glass substrate.

11. A device comprising:

an interposer comprising;

a silicon substrate; and

a first plurality of through-substrate vias (TSVs) penetrating through the silicon substrate;

a glass substrate bonded to the interposer, wherein the glass substrate comprises a second plurality of TSVs therein, with the first plurality of TSVs being electrically coupled to the second plurality of TSVs;

an etch stop layer between the interposer and the glass substrate; and

an oxide layer between the etch stop layer and the glass substrate, wherein the second plurality of TSVs penetrates through the oxide layer.

12. The device of claim 11, wherein the etch stop layer comprises silicon nitride.

13. The device of claim 11 further comprising:

an opening extending from a surface of the glass substrate into at least an intermediate level of the glass substrate; and

a die in the opening and bonded to the interposer.