Semiconductor memory device and method of writing into the same

• US 8,411,484 B2
• Filed: 10/31/2008
• Issued: 04/02/2013
• Est. Priority Date: 05/16/2006
• Status: Expired due to Fees

• Current Assignee: Fujitsu Limited
• Original Assignee: Fujitsu Limited
• Inventors: Aoki, Masaki
• Primary Examiner(s): Hur, J. H.
• Application Number:
  US12/262,577
• Publication Number:
  US 20090059651A1
• Time in Patent Office: 1,614 Days
• Field of Search: 365/148, 365/158, 365/163, 365/189.16, 365/189.06
• US Class Current: 365/148
• CPC Class Codes: G11C 13/0007 comprising metal oxide memory material, e.g. perovskites
• CPC Class Codes: G11C 13/0069 Writing or programming circuits or methods
• CPC Class Codes: G11C 2013/0071 Write using write potential applied to access device gate
• CPC Class Codes: G11C 2013/009 Write using potential difference applied between cell electrodes
• CPC Class Codes: G11C 2213/32 Material having simple binary metal oxide structure
• CPC Class Codes: G11C 2213/34 Material includes an oxide or a nitride
• CPC Class Codes: G11C 2213/79 Array wherein the access device being a transistor
• CPC Class Codes: H01L 27/101 including resistors or capacitors only
• CPC Class Codes: H10B 63/00 Resistance change memory devices, e.g. resistive RAM [ReRAM] devices

Abstract

A method of writing into a semiconductor memory device, which includes a resistance memory element 14 which memorizes a high resistance state and a low resistance state and switches between the high resistance state and the low resistance state by an application of a voltage; a transistor 12 including a drain terminal connected to one terminal of the resistance memory element 14 and a source terminal connected to a reference voltage; and a transistor 16 including a source terminal connected to the other terminal of the resistance memory element 14. When a write voltage is applied to the resistance memory element 14 via the transistor 16 to switch the resistance memory element 14 from the low resistance state to the high resistance state, a voltage to be applied to the resistance memory element 14 is controlled at a value which is not less than a reset voltage of the resistance memory element 14 and less than a set voltage of the resistance memory element 14 by controlling a voltage to be applied to a gate terminal of the transistor 16 so as to be set at a value which is not less than a total of the reset voltage and a threshold voltage of the transistor 16 and is less than a total of the set voltage and the threshold voltage of the transistor 16.

Claims

1. A method of writing into a semiconductor memory device comprising a resistance memory element which memorizes a high resistance state and a low resistance state and switches between the high resistance state and the low resistance state by an application of a voltage;

a first transistor comprising a drain terminal connected to one terminal of the resistance memory element and a source terminal connected to a reference voltage; and

a second transistor comprising a source terminal connected to the other terminal of the resistance memory element, comprising;

clamping a voltage to be applied to said other terminal of the resistance memory element at a value which is not less than a reset voltage of the resistance memory element and less than a set voltage of the resistance memory element by controlling a second drive voltage to be applied to a gate terminal of the second transistor so as to be set at a value which is not less than a total of the reset voltage and a threshold voltage of the second transistor and is less than a total of the set voltage and the threshold voltage of the second transistor, when a write voltage is applied to the resistance memory element via the second transistor to switch the resistance memory element from the low resistance state to the high resistance state.

2. The method of writing into a semiconductor memory device according to claim 1, wherein

the write voltage to be applied to a drain terminal of the second transistor is set at a value which is not less than a total of the reset voltage and the threshold voltage of the second transistor.

3. The method of writing into a semiconductor memory device according to claim 1, wherein

the write voltage, the second drive voltage to be applied to the gate terminal of the second transistor and a first drive voltage to be applied to a gate terminal of the first transistor are set at a power supply voltage.

4. The method of writing into a semiconductor memory device according to claim 1, wherein

a first drive voltage to be applied to a gate terminal of the first transistor is so set that a channel resistance of the first transistor is sufficiently smaller than a resistance value of the resistance memory element in the low resistance state.

5. The method of writing into a semiconductor memory device according to claim 1, wherein

a constant voltage is applied to a gate terminal of the first transistor, and

the write voltage which is a pulse voltage is applied to a drain terminal of the second transistor.

6. The method of writing into a semiconductor memory device according to claim 1, wherein

the write voltage which is a constant voltage is applied to a drain terminal of the second transistor.

7. A semiconductor memory device comprising:

a resistance memory element which memorizes a high resistance state and a low resistance state and switches between the high resistance state and the low resistance state by an application of a voltage;

a first transistor comprising a drain terminal connected to one terminal of the resistance memory element and a source terminal connected to a reference voltage;

a second transistor comprising a source terminal connected to the other terminal of the resistance memory element; and

a control circuit which controls a channel resistance of the first transistor at a value which is sufficiently smaller than a resistance value of the resistance memory element in the high resistance state and is sufficiently larger than a resistance value of the resistance memory element in the low resistance state by controlling a first drive voltage to be applied to a gate terminal of the first transistor, when a write voltage is applied to the resistance memory element via the second transistor to switch the resistance memory element from the high resistance state to the low resistance state, and which clamps a voltage to be applied to said other terminal of the resistance memory element at a value which is not less than a reset voltage of the resistance memory element and less than a set voltage of the resistance memory element by controlling a second drive voltage to be applied to a gate terminal of the second transistor so as to be set at a value which is not less than a total of the reset voltage and a threshold voltage of the second transistor and is less than a total of the set voltage and the threshold voltage of the second transistor, when a write voltage is applied to the resistance memory element via the second transistor to switch the resistance memory element from the low resistance state to the high resistance state.

8. The semiconductor memory device according to claim 7, wherein

a bit line is disposed between the resistance memory element and the second transistor, and

the second transistor is a column selector which selects the bit line.

9. A semiconductor memory device comprising:

a resistance memory element which memorizes a high resistance state and a low resistance state and switches between the high resistance state and the low resistance state by an application of a voltage;

a first transistor comprising a drain terminal connected to one terminal of the resistance memory element and a source terminal connected to a reference voltage;

a second transistor comprising a source terminal connected to the other terminal of the resistance memory element; and

a control circuit which clamps a voltage to be applied to said other terminal of the resistance memory element at a value which is not less than a reset voltage of the resistance memory element and less than a set voltage of the resistance memory element by controlling a second drive voltage to be applied to a gate terminal of the second transistor so as to be set at a value which is not less than a total of the reset voltage and a threshold voltage of the second transistor and is less than a total of the set voltage and the threshold voltage of the second transistor, when a write voltage is applied to the resistance memory element via the second transistor to switch the resistance memory element from the low resistance state to the high resistance state.

10. A semiconductor memory device comprising:

a plurality of memory cells arranged in a matrix and each of which comprises a resistance memory element which memorizes a high resistance state and a low resistance state and switches between the high resistance state and the low resistance state by an application of a voltage;

a plurality of bit lines extended in a first direction and arranged in parallel with each other, each of the bit lines being connected to the other terminals of the resistance memory elements of the memory cells arranged in the first direction;

a plurality of word lines extended in a second direction crossing the first direction and arranged in parallel with each other, each of the word line being connected to gate terminals of the first transistors of the memory cells arranged in the second direction;

a plurality of second transistors , each of the second transistors being connected to each of the plurality of bit lines, each of the second transistors comprising a source terminal connected via the bit line to the other terminals of the resistance memory elements of the memory cells arranged in the first direction; and

a control circuit which controls a channel resistance of the first transistor of an arbitrary one of the plurality of memory cells at a value which is sufficiently smaller than a resistance value of the resistance memory element in the high resistance state and is sufficiently larger than a resistance value of the resistance memory element in the low resistance state by controlling a first drive voltage to be applied to the word line associated with the arbitrary memory cell, when the resistance memory element of the arbitrary memory cell is switched from the high resistance state to the low resistance state, and which clamps a voltage to be applied to said other terminal of the resistance memory element of an arbitrary one of the plurality of memory cells at a value which is not less than a reset voltage of the resistance memory element and less than a set voltage of the resistance memory element by controlling a second drive voltage to be applied to a gate terminal of the second transistor so as to be set at a value which is not less than a total of the reset voltage and a threshold voltage of the second transistor and is less than a total of the set voltage and the threshold voltage of the second transistor, when the resistance memory element of the arbitrary memory cell is switched from the low resistance state to the high resistance state.