Self-powered detection device with a non-volatile memory

• US 8,411,505 B2
• Filed: 11/12/2010
• Issued: 04/02/2013
• Est. Priority Date: 11/12/2009
• Status: Active Grant

• Current Assignee: EM Microelectronic - Marin SA (The Swatch Group AG)
• Original Assignee: EM Microelectronic - Marin SA (The Swatch Group AG)
• Inventors: Kamp, David A.
• Primary Examiner(s): Le, Vu
• Assistant Examiner(s): Yang, Han
• Application Number:
  US12/945,203
• Publication Number:
  US 20110115540A1
• Time in Patent Office: 872 Days
• Field of Search: 365/185.04, 365/211, 365/196, 365/189.16
• US Class Current: 365/185.04
• CPC Class Codes: E05B 2047/0058 by batteries
• CPC Class Codes: E05B 2047/0062 by generator
• CPC Class Codes: E05B 2047/0064 by solar cells
• CPC Class Codes: E05B 39/00 Locks giving indication of authorised or unauthorised unlocking with key identification means E05B35/001; alarm locks E05B45/00
• CPC Class Codes: E05B 45/06 Electric alarm locks E05B45/005 takes precedence
• CPC Class Codes: E05B 51/023 actuated in response to external pressure, blast or explosion E05B65/102 takes precedence
• CPC Class Codes: E05B 67/22 Padlocks with sliding shackles, with or without rotary or pivotal movement
• CPC Class Codes: G08B 13/06 by tampering with fastening
• CPC Class Codes: G08B 29/181 due to failing power supply

Abstract

The self-powered detection device comprises a Non-Volatile Memory (NVM) unit (52) formed at least by a NVM cell and a sensor which is activated by a physical or chemical action or phenomenon, this sensor forming an energy harvester that transforms energy from said physical or chemical action or phenomenon into an electrical stimulus pulse, said NVM unit being arranged for storing in said NVM cell, by using the electrical power of said electrical stimulus pulse, a bit of information relative to the detection by said sensor, during a detection mode of the self-powered detection device, of at least one physical or chemical action or phenomenon applied to it with at least a given strength or intensity and resulting in a voltage stimulus signal provided between a set control terminal (SET) and a base terminal (SET *) of said NVM unit with at least a given set voltage. The self-powered detection device comprises a read circuit (56) or is arranged to be coupled to such a read circuit and further comprises a clamp circuit (54) located between the sensor and the NVM unit, this clamp circuit being arranged for passing said voltage stimulus signal on a set line connecting the sensor and the set control terminal of the NVM unit, this voltage stimulus pulse having a polarity corresponding to a set polarity of said NVM cell, and for blocking other voltage signals having approximately an amplitude corresponding to said set voltage or higher and an inverse polarity relative to the set polarity of said NVM cell, in order to avoid a possible erase of this NVM cell by such other voltage signals.

Claims

1. A self-powered detection device comprising a Non-Volatile Memory unit formed at least by a NVM cell and a sensor which is activated by a physical or chemical action or phenomenon, this sensor forming an energy harvester that transforms energy from said physical or chemical action or phenomenon into an electrical stimulus pulse, said NVM unit being arranged for storing in said NVM cell, by using the electrical power of said electrical stimulus pulse, a bit of information relative to the detection by said sensor, during a detection mode of the self-powered detection device, of at least one physical or chemical action or phenomenon applied to it with at least a given strength or intensity and resulting in a voltage stimulus signal provided between a set control terminal and a base terminal of said NVM unit with at least a given set voltage, the self-powered detection device comprising a read circuit or being arranged to be coupled to such a read circuit;

wherein this self-powered detection device further comprises a clamp circuit located between said sensor and said NVM unit, this clamp circuit being arranged for passing said voltage stimulus signal on a set line connecting the sensor and said set control terminal of the NVM unit, this voltage stimulus pulse having a polarity corresponding to a set polarity of said NVM cell, and for blocking other voltage signals having approximately an amplitude corresponding to said set voltage or higher and an inverse polarity relative to the set polarity of said NVM cell, in order to avoid a possible erase of this NVM cell by such other voltage signals.

2. The self-powered detection device according to claim 1, wherein the clamp circuit comprises a diode arranged between the ground of the sensor and said set line.

3. The self-powered detection device according to claim 1, wherein the clamp circuit is arranged also for blocking voltage signals with the set polarity and having a voltage amplitude over a certain threshold which is higher than said set voltage, in order to protect the NVM unit by preventing damage to the detection device.

4. The self-powered detection device according to claim 2, wherein said diode is designed to break down at a certain threshold high enough to allow a set of said NVM cell but low enough to prevent damage of the detection device.

5. The self-powered detection device according to claim 1, wherein said clamp circuit is further arranged for maintaining its output to the ground or to a determined low level voltage in a read mode or in a reset mode of the detection device where this detection device is power supplied by a temporary power source, this clamp circuit thus further defining a ground or determined low level clamp.

6. The self-powered detection device according to claim 5, wherein the clamp circuit comprises a first switch and a second switch, the first switch being arranged on said set line between the sensor and the set control terminal of the NVM unit, thus allowing to disconnect the NVM unit from the sensor, the second switch being arranged between the set line and the ground or determined low level voltage of a temporary power source, these first and second switches being controlled so that when the first switch is turned on, or respectively turned off, the second switch is turned off, or respectively turned on, and so that the first switch is turned on when the clamp circuit receives said voltage stimulus signal when supplied by the temporary power source or not supplied.

7. The self-powered detection device according to claim 6, wherein said first and second switches are respectively formed by two complementary transistors, the control gates of these two transistors being controlled by a control signal provided by a control part of said clamp circuit, this control part being arranged so that the control signal has a first state when the amplitude of the voltage signal inputting the clamp circuit is higher than a defined intermediate voltage of said temporary power source and a second opposite state when this amplitude is lower than this intermediate voltage.