Nano-imprint lithography stack with enhanced adhesion between silicon-containing and non-silicon containing layers
First Claim
1. A nano-imprint lithography stack comprising:
- a nano-imprint lithography substrate;
a first non-silicon-containing layer solidified from a first polymerizable, non-silicon-containing composition, wherein the first non-silicon-containing layer is adhered directly or through one or more intervening layers to the nano-imprint lithography substrate;
a silicon-containing layer solidified from a polymerizable silicon-containing composition adhered to a surface of the first non-silicon-containing layer, the silicon-containing layer comprising;
a silsesquioxane with a general formula
(R′
(4-2z)SiOz)x(HOSiO1.5)y,wherein;
R′
is a hydrocarbon group or two or more different hydrocarbon groups other than methyl,1<
z<
2, andx and y are integers; and
a second non-silicon-containing layer solidified from a second polymerizable, non-silicon-containing composition adhered to a surface of the silicon-containing layer such that the silicon-containing layer is sandwiched between the first and second non-silicon-containing layers.
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Abstract
A nano-imprint lithography stack includes a nano-imprint lithography substrate, a non-silicon-containing layer solidified from a first polymerizable, non-silicon-containing composition, and a silicon-containing layer solidified from a polymerizable silicon-containing composition adhered to a surface of the non-silicon-containing layer. The non-silicon-containing layer is adhered directly or through one or more intervening layers to the nano-imprint lithography substrate. The silicon-containing layer includes a silsesquioxane with a general formula (R′(4-2z)SiOz)x(HOSiO1.5)y, wherein R′ is a hydrocarbon group or two or more different hydrocarbon groups other than methyl, 1<z<2, and x and y are integers. The imprint lithography stack may further include a second non-silicon-containing layer solidified from a second polymerizable, non-silicon-containing composition adhered to a surface of the silicon-containing layer such that the silicon-containing layer is sandwiched between the non-silicon-containing layers.
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Citations
14 Claims
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1. A nano-imprint lithography stack comprising:
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a nano-imprint lithography substrate; a first non-silicon-containing layer solidified from a first polymerizable, non-silicon-containing composition, wherein the first non-silicon-containing layer is adhered directly or through one or more intervening layers to the nano-imprint lithography substrate; a silicon-containing layer solidified from a polymerizable silicon-containing composition adhered to a surface of the first non-silicon-containing layer, the silicon-containing layer comprising; a silsesquioxane with a general formula
(R′
(4-2z)SiOz)x(HOSiO1.5)y,wherein; R′
is a hydrocarbon group or two or more different hydrocarbon groups other than methyl,1<
z<
2, andx and y are integers; and a second non-silicon-containing layer solidified from a second polymerizable, non-silicon-containing composition adhered to a surface of the silicon-containing layer such that the silicon-containing layer is sandwiched between the first and second non-silicon-containing layers. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A nano-imprint lithography stack comprising:
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a nano-imprint lithography substrate; a first non-silicon-containing layer solidified from a first polymerizable, non-silicon-containing composition, wherein the first non-silicon-containing layer is adhered directly or through one or more intervening layers to the nano-imprint lithography substrate; a silicon-containing layer solidified from a polymerizable silicon-containing composition adhered to a surface of the first non-silicon-containing layer, the silicon-containing layer comprising; a silsesquioxane with a general formula
(R′
(4-2z)SiOz)x(HOSiO1.5)y,wherein; R′
is a hydrocarbon group or two or more different hydrocarbon groups other than methyl,1<
z<
2, andx and y are integers, wherein the silicon-containing layer is less than about 100 nm thick. - View Dependent Claims (9, 10, 11, 12, 13, 14)
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Specification