Nano-imprint lithography stack with enhanced adhesion between silicon-containing and non-silicon containing layers

• US 8,415,010 B2
• Filed: 10/19/2009
• Issued: 04/09/2013
• Est. Priority Date: 10/20/2008
• Status: Active Grant

• Current Assignee: Mii Newco, Inc.
• Original Assignee: Molecular Imprints, Inc. (Canon Inc.)
• Inventors: Liu, Weijun, Xu, Frank Y.
• Primary Examiner(s): Nakarani, D. S.
• Application Number:
  US12/581,634
• Publication Number:
  US 20100098940A1
• Time in Patent Office: 1,268 Days
• Field of Search: 428/336, 428/446, 428/448, 428/451
• US Class Current: 428/336
• CPC Class Codes: B82Y 10/00 Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
• CPC Class Codes: B82Y 40/00 Manufacture or treatment of nanostructures
• CPC Class Codes: G03F 7/0002 Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
• CPC Class Codes: G03F 7/027 Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds G03F7/075 takes precedence
• CPC Class Codes: G03F 7/0382 the macromolecular compound being present in a chemically amplified negative photoresist composition
• CPC Class Codes: G03F 7/0757 Macromolecular compounds containing Si-O, Si-C or Si-N bonds G03F7/0752 takes precedence
• CPC Class Codes: Y10T 428/265 1 mil or less
• CPC Class Codes: Y10T 428/31667 Next to addition polymer from unsaturated monomers, or aldehyde or ketone condensation product

Abstract

A nano-imprint lithography stack includes a nano-imprint lithography substrate, a non-silicon-containing layer solidified from a first polymerizable, non-silicon-containing composition, and a silicon-containing layer solidified from a polymerizable silicon-containing composition adhered to a surface of the non-silicon-containing layer. The non-silicon-containing layer is adhered directly or through one or more intervening layers to the nano-imprint lithography substrate. The silicon-containing layer includes a silsesquioxane with a general formula (R′_(4-2z)SiO_z)_x(HOSiO_1.5)_y, wherein R′ is a hydrocarbon group or two or more different hydrocarbon groups other than methyl, 1<z<2, and x and y are integers. The imprint lithography stack may further include a second non-silicon-containing layer solidified from a second polymerizable, non-silicon-containing composition adhered to a surface of the silicon-containing layer such that the silicon-containing layer is sandwiched between the non-silicon-containing layers.

Claims

1. A nano-imprint lithography stack comprising:

a nano-imprint lithography substrate;

a first non-silicon-containing layer solidified from a first polymerizable, non-silicon-containing composition, wherein the first non-silicon-containing layer is adhered directly or through one or more intervening layers to the nano-imprint lithography substrate;

a silicon-containing layer solidified from a polymerizable silicon-containing composition adhered to a surface of the first non-silicon-containing layer, the silicon-containing layer comprising;

a silsesquioxane with a general formula

(R′

_(4-2z)SiO_z)_x(HOSiO_1.5)_y,

wherein;

R′

is a hydrocarbon group or two or more different hydrocarbon groups other than methyl,

1<

z<

2, and

x and y are integers; and

a second non-silicon-containing layer solidified from a second polymerizable, non-silicon-containing composition adhered to a surface of the silicon-containing layer such that the silicon-containing layer is sandwiched between the first and second non-silicon-containing layers.

2. The imprint lithography stack of claim 1, wherein a silicon content of the silicon-containing layer is at least about 10 wt %.

3. The imprint lithography stack of claim 1, wherein the silicon-containing layer is adhered to the first non-silicon-containing layer through covalent bonds between carbon-containing components in the first non-silicon-containing layer and carbon-containing components in the silicon-containing composition.

4. The imprint lithography stack of claim 1, wherein the silicon-containing layer is adhered to the first non-silicon-containing layer through polar interactions between carbon-containing components in the first non-silicon-containing layer and carbon-containing components in the silicon-containing composition.

5. The imprint lithography stack of claim 1, wherein the polar interactions comprise hydrogen-bonding interactions.

6. The imprint lithography stack of claim 1, wherein the silicon-containing layer is less than about 100 nm thick.

7. The imprint lithography stack of claim 1, wherein R′

comprises a phenyl group.

8. A nano-imprint lithography stack comprising:

a nano-imprint lithography substrate;

a first non-silicon-containing layer solidified from a first polymerizable, non-silicon-containing composition, wherein the first non-silicon-containing layer is adhered directly or through one or more intervening layers to the nano-imprint lithography substrate;

a silicon-containing layer solidified from a polymerizable silicon-containing composition adhered to a surface of the first non-silicon-containing layer, the silicon-containing layer comprising;

a silsesquioxane with a general formula

(R′

_(4-2z)SiO_z)_x(HOSiO_1.5)_y,

wherein;

R′

is a hydrocarbon group or two or more different hydrocarbon groups other than methyl,

1<

z<

2, and

x and y are integers,

wherein the silicon-containing layer is less than about 100 nm thick.

9. The imprint lithography stack of claim 8, further comprising a second non-silicon-containing layer solidified from a second polymerizable, non-silicon-containing composition adhered to a surface of the silicon-containing layer such that the silicon-containing layer is sandwiched between the first and second non-silicon-containing layers.

10. The imprint lithography stack of claim 8, wherein a silicon content of the silicon-containing layer is at least about 10 wt %.

11. The imprint lithography stack of claim 8, wherein the silicon-containing layer is adhered to the first non-silicon-containing layer through covalent bonds between carbon-containing components in the first non-silicon-containing layer and carbon-containing components in the silicon-containing composition.

12. The imprint lithography stack of claim 8, wherein the silicon-containing layer is adhered to the first non-silicon-containing layer through polar interactions between carbon-containing components in the first non-silicon-containing layer and carbon-containing components in the silicon-containing composition.

13. The imprint lithography stack of claim 8, wherein the polar interactions comprise hydrogen-bonding interactions.

14. The imprint lithography stack of claim 8, wherein R′

comprises a phenyl group.