Production method of thin film transistor using amorphous oxide semiconductor film
First Claim
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1. A production method for a thin film transistor comprising an active layer comprising an oxide semiconductor film including at least one element of In and Zn, the method comprising the sequence of steps of:
- (1) a first step of forming a metal oxide film, wherein the metal oxide film has a first resistivity of 1×
10−
4 Ω
cm or more and 1 Ω
cm or less;
(2) a second step of annealing the metal oxide film in an oxidative atmosphere to obtain an oxide semiconductor film with a second resistivity which is 1 Ω
cm or more and 1×
104 Ω
cm or less; and
(3) a third step of forming an insulating oxide layer on the oxide semiconductor film.
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Abstract
A production method of a thin film transistor including an active layer including an amorphous oxide semiconductor film, wherein a step of forming the active layer includes a first step of forming the oxide film in an atmosphere having an introduced oxygen partial pressure of 1×10−3 Pa or less, and a second step of annealing the oxide film in an oxidative atmosphere after the first step.
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Citations
15 Claims
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1. A production method for a thin film transistor comprising an active layer comprising an oxide semiconductor film including at least one element of In and Zn, the method comprising the sequence of steps of:
-
(1) a first step of forming a metal oxide film, wherein the metal oxide film has a first resistivity of 1×
10−
4 Ω
cm or more and 1 Ω
cm or less;(2) a second step of annealing the metal oxide film in an oxidative atmosphere to obtain an oxide semiconductor film with a second resistivity which is 1 Ω
cm or more and 1×
104 Ω
cm or less; and(3) a third step of forming an insulating oxide layer on the oxide semiconductor film. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14)
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15. A production method for a thin film transistor
comprising an active layer comprising an oxide semiconductor film including at least one element of In and Zn, the method comprising the sequence of steps of: -
(1) a first step of forming a metal oxide film, wherein the metal oxide film has a first resistivity of 1×
10−
4 Ω
cm or more and 1 Ω
cm or less; and(2) a second step of annealing the metal oxide film in an oxidative atmosphere to obtain an oxide semiconductor film with a second resistivity which is 1 Ω
cm or more and 1×
104 Ω
cm or less, wherein a temperature range of the annealing is 150°
C. or higher and 450°
C. or lower.
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Specification