Semiconductor device and electronic device
First Claim
1. A semiconductor device comprising:
- a first transistor; and
a second transistor,wherein a first terminal of the first transistor is electrically connected to a first wiring and a second terminal of the first transistor is electrically connected to a second wiring,wherein a gate of the second transistor is electrically connected to a third wiring, a first terminal of the second transistor is electrically connected to the third wiring, and a second terminal of the second transistor is electrically connected to a gate of the first transistor,wherein each of the first transistor and the second transistor comprises an oxide semiconductor layer comprising a channel region, andwherein an off-state current of each of the first transistor and the second transistor per channel width of 1 μ
m is 1 aA or less.
1 Assignment
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Accused Products
Abstract
An object is to improve the drive capability of a semiconductor device. The semiconductor device includes a first transistor and a second transistor. A first terminal of the first transistor is electrically connected to a first wiring. A second terminal of the first transistor is electrically connected to a second wiring. A gate of the second transistor is electrically connected to a third wiring. A first terminal of the second transistor is electrically connected to the third wiring. A second terminal of the second transistor is electrically connected to a gate of the first transistor. A channel region is formed using an oxide semiconductor layer in each of the first transistor and the second transistor. The off-state current of each of the first transistor and the second transistor per channel width of 1 μm is 1 aA or less.
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Citations
20 Claims
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1. A semiconductor device comprising:
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a first transistor; and a second transistor, wherein a first terminal of the first transistor is electrically connected to a first wiring and a second terminal of the first transistor is electrically connected to a second wiring, wherein a gate of the second transistor is electrically connected to a third wiring, a first terminal of the second transistor is electrically connected to the third wiring, and a second terminal of the second transistor is electrically connected to a gate of the first transistor, wherein each of the first transistor and the second transistor comprises an oxide semiconductor layer comprising a channel region, and wherein an off-state current of each of the first transistor and the second transistor per channel width of 1 μ
m is 1 aA or less. - View Dependent Claims (2, 3, 4)
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5. A semiconductor device comprising:
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a first transistor; a second transistor; a third transistor; and a fourth transistor, wherein a first terminal of the first transistor is electrically connected to a first wiring and a second terminal of the first transistor is electrically connected to a second wiring, wherein a gate of the second transistor is electrically connected to a third wiring, a first terminal of the second transistor is electrically connected to the third wiring, and a second terminal of the second transistor is electrically connected to a gate of the first transistor, wherein a gate of the third transistor is electrically connected to a fourth wiring, a first terminal of the third transistor is electrically connected to a fifth wiring, and a second terminal of the third transistor is electrically connected to the second wiring, wherein a gate of the fourth transistor is electrically connected to the fourth wiring, a first terminal of the fourth transistor is electrically connected to the fifth wiring, and a second terminal of the fourth transistor is electrically connected to the gate of the first transistor, wherein each of the first to fourth transistors comprises an oxide semiconductor layer comprising a channel region, and wherein an off-state current of each of the first to fourth transistors per channel width of 1 μ
m is 1 aA or less. - View Dependent Claims (6, 7, 8)
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9. A semiconductor device comprising:
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a first transistor and a second transistor, wherein a first terminal of the first transistor is electrically connected to a first wiring and a second terminal of the first transistor is electrically connected to a second wiring, wherein a gate of the second transistor is electrically connected to the first wiring, a first terminal of the second transistor is electrically connected to the first wiring, and a second terminal of the second transistor is electrically connected to a gate of the first transistor, wherein each of the first transistor and the second transistor comprises an oxide semiconductor layer comprising a channel region, and wherein an off-state current of each of the first transistor and the second transistor per channel width of 1 μ
m is 1 aA or less. - View Dependent Claims (10, 11, 12)
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13. A semiconductor device comprising:
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a first transistor; a second transistor; a third transistor; and a fourth transistor, wherein a first terminal of the first transistor is electrically connected to a first wiring and a second terminal of the first transistor is electrically connected to a second wiring, wherein a gate of the second transistor is electrically connected to the first wiring, a first terminal of the second transistor is electrically connected to the first wiring, and a second terminal of the second transistor is electrically connected to a gate of the first transistor, wherein a gate of the third transistor is electrically connected to a third wiring, a first terminal of the third transistor is electrically connected to a fourth wiring, and a second terminal of the third transistor is electrically connected to the second wiring, wherein a gate of the fourth transistor is electrically connected to the third wiring, a first terminal of the fourth transistor is electrically connected to the fourth wiring, and a second terminal of the fourth transistor is electrically connected to the gate of the first transistor, wherein each of the first to fourth transistors comprises an oxide semiconductor layer comprising a channel region, and wherein an off-state current of each of the first to fourth transistors per channel width of 1 μ
m is 1 aA or less. - View Dependent Claims (14, 15, 16)
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17. A semiconductor device comprising:
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a first transistor; a second transistor; N third transistors, where N is a natural number; and N fourth transistors, wherein a first terminal of the first transistor is electrically connected to a first wiring and a second terminal of the first transistor is electrically connected to a second wiring, wherein a gate of the second transistor is electrically connected to the first wiring, a first terminal of the second transistor is electrically connected to the first wiring, and a second terminal of the second transistor is electrically connected to a gate of the first transistor, wherein each gate of the N third transistors and each gate of the N fourth transistors are electrically connected to one of an N third wiring, respectively, wherein first terminals of the N third transistors are electrically connected to a fourth wiring, and second terminals of the N third transistors are electrically connected to the second wiring, wherein first terminals of the N fourth transistors are electrically connected to the fourth wiring, and second terminals of the N fourth transistors are electrically connected to the gate of the first transistor, wherein each of the first transistor, the second transistor, the N third transistors, and the N fourth transistors comprises an oxide semiconductor layer comprising a channel region, and wherein an off-state current of each of the first transistor, the second transistor, the N third transistors, and the N fourth transistors per channel width of 1 μ
m is 1 aA or less. - View Dependent Claims (18, 19, 20)
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Specification