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Semiconductor device and electronic device

  • US 8,415,665 B2
  • Filed: 12/06/2010
  • Issued: 04/09/2013
  • Est. Priority Date: 12/11/2009
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • a first transistor; and

    a second transistor,wherein a first terminal of the first transistor is electrically connected to a first wiring and a second terminal of the first transistor is electrically connected to a second wiring,wherein a gate of the second transistor is electrically connected to a third wiring, a first terminal of the second transistor is electrically connected to the third wiring, and a second terminal of the second transistor is electrically connected to a gate of the first transistor,wherein each of the first transistor and the second transistor comprises an oxide semiconductor layer comprising a channel region, andwherein an off-state current of each of the first transistor and the second transistor per channel width of 1 μ

    m is 1 aA or less.

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