Semiconductor light emitting device
First Claim
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1. A semiconductor light emitting device comprising:
- a light emitting structure including a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer;
a channel layer on the light emitting structure, having protrusions;
an electrode layer on the light emitting structure and the channel layer; and
a conductive support member on the electrode layer,wherein the channel layer is formed along the peripheral portion of an upper surface of the light emitting structure, and the electrode layer is formed at an inner side of the upper surface of the light emitting structure,wherein the protrusions of the channel layer are formed at an under surface of the channel layer such that the protrusions protrude toward the light emitting structure,wherein the first conductive semiconductor layer includes a roughness pattern on a lower surface,wherein the electrode layer includes a protrusion directly contacted with the light emitting structure, andwherein the protrusion of the electrode layer is protruded toward the light emitting structure.
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Abstract
Disclosed is a semiconductor light emitting device. The semiconductor light emitting device includes a light emitting structure including a plurality of compound semiconductor layers including a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer; an electrode layer on the plurality of compound semiconductor layers; and a channel layer including protrusion and formed along a peripheral portion of an upper surface of the plurality of compound semiconductor layers.
18 Citations
19 Claims
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1. A semiconductor light emitting device comprising:
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a light emitting structure including a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer; a channel layer on the light emitting structure, having protrusions; an electrode layer on the light emitting structure and the channel layer; and a conductive support member on the electrode layer, wherein the channel layer is formed along the peripheral portion of an upper surface of the light emitting structure, and the electrode layer is formed at an inner side of the upper surface of the light emitting structure, wherein the protrusions of the channel layer are formed at an under surface of the channel layer such that the protrusions protrude toward the light emitting structure, wherein the first conductive semiconductor layer includes a roughness pattern on a lower surface, wherein the electrode layer includes a protrusion directly contacted with the light emitting structure, and wherein the protrusion of the electrode layer is protruded toward the light emitting structure. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15)
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16. A semiconductor light emitting device comprising:
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a light emitting structure including an n-type conductive semiconductor layer, an active layer and a p-type conductive semiconductor layer; a channel layer on the light emitting structure, having protrusions; an electrode layer on the light emitting structure and the channel layer; and a conductive support member on the electrode layer, wherein the channel layer is formed along the peripheral portion of an upper surface of the light emitting structure, wherein the electrode layer is formed on the upper surface of the light emitting structure, wherein a part of the channel layer is extended outward from a side surface of the light emitting structure, wherein the protrusions of the channel layer are protruded into the light emitting structure, wherein the first conductive semiconductor layer includes a roughness pattern on a lower surface, wherein the electrode layer includes a protrusion directly contacted with the light emitting structure, and wherein the protrusion of the electrode layer is protruded toward the light emitting structure. - View Dependent Claims (17, 18, 19)
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Specification