×

Semiconductor device and method for manufacturing the same

  • US 8,415,711 B2
  • Filed: 09/15/2011
  • Issued: 04/09/2013
  • Est. Priority Date: 09/21/2010
  • Status: Expired due to Fees
First Claim
Patent Images

1. A semiconductor device, comprising:

  • a first trench provided in a semiconductor substrate of a first conductivity type;

    a first semiconductor layer of the first conductivity type having an impurity concentration lower than that of the semiconductor substrate, a second semiconductor layer of a second conductivity type, and a third semiconductor layer of the first conductivity type having an impurity concentration higher than that of the first semiconductor layer, the first to third semiconductor layers being formed in a stacked manner to cover the first trench;

    a second trench provided in the third semiconductor layer in such a manner that the second trench at least partially penetrates the third semiconductor layer to expose the second semiconductor layer in a vertical direction relative to a plane of the semiconductor substrate, and at least partially penetrates the third semiconductor layer to expose the second semiconductor layer in a horizontal direction relative to the plane of the semiconductor substrate;

    a fourth semiconductor layer of the second conductivity type having an impurity concentration higher than that of the second semiconductor layer, the fourth semiconductor layer being formed to cover the second trench;

    third trenches arranged between portions of the fourth semiconductor layer in such a manner as to be spaced apart from the side of the fourth semiconductor layer, the third trenches being provided so that each of the trenches penetrates the third semiconductor layer to expose the second semiconductor layer or penetrates the third and second semiconductor layers to expose the first semiconductor layer in the vertical direction relative to the plane of the semiconductor substrate, and so that each of the trenches penetrates the second semiconductor layer to expose the first semiconductor layer on one end or penetrates the second and first semiconductor layers to expose the semiconductor substrate on one end and to expose the third semiconductor layer on the other end in the horizontal direction relative to the plane of the semiconductor substrate; and

    trench gates formed to cover the third trenches, each trench gate including a gate insulating film and a gate electrode film formed in a stacked manner.

View all claims
  • 1 Assignment
Timeline View
Assignment View
    ×
    ×