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Magnetic stack having assist layer

  • US 8,416,620 B2
  • Filed: 11/11/2010
  • Issued: 04/09/2013
  • Est. Priority Date: 04/28/2009
  • Status: Active Grant
First Claim
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1. A magnetic tunnel junction comprising:

  • a ferromagnetic free layer and a first ferromagnetic pinned reference layer, each having an out-of-plane magnetic anisotropy and an out-of-plane magnetization orientation, the ferromagnetic free layer magnetization orientation configured to be switchable by spin torque imparted by a spin polarized current passing through the ferromagnetic free layer;

    a first oxide barrier layer between the ferromagnetic free layer and the the first ferromagnetic pinned reference layer; and

    a ferromagnetic spin polarizing assist layer having low magnetic anisotropy less than 700 Oe and positioned to apply a magnetic field on the ferromagnetic free layer.

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