Methods and system for lithography calibration

• US 8,418,088 B2
• Filed: 11/05/2009
• Issued: 04/09/2013
• Est. Priority Date: 11/06/2008
• Status: Active Grant

• Current Assignee: ASML Netherlands BV (ASML Holding NV)
• Original Assignee: ASML Netherlands BV (ASML Holding NV)
• Inventors: Ye, Jun, Cao, Yu, Feng, Hanying
• Primary Examiner(s): DO, THUAN V
• Application Number:
  US12/613,221
• Publication Number:
  US 20100119961A1
• Time in Patent Office: 1,251 Days
• Field of Search: 716/55, 716/104, 716/132
• US Class Current: 716/55
• CPC Class Codes: G03F 1/36 Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
• CPC Class Codes: G03F 1/68 Preparation processes not covered by groups G03F1/20 - G03F1/50
• CPC Class Codes: G03F 7/70433 Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors
• CPC Class Codes: G03F 7/705 Modelling or simulating from physical phenomena up to complete wafer processes or whole workflow in wafer productions
• CPC Class Codes: G03F 7/70516 Calibration of components of the microlithographic apparatus, e.g. light sources, addressable masks or detectors
• CPC Class Codes: G06F 30/00 Computer-aided design [CAD]

Abstract

A method of efficient optical and resist parameters calibration based on simulating imaging performance of a lithographic process utilized to image a target design having a plurality of features. The method includes the steps of determining a function for generating a simulated image, where the function accounts for process variations associated with the lithographic process; and generating the simulated image utilizing the function, where the simulated image represents the imaging result of the target design for the lithographic process. Systems and methods for calibration of lithographic processes whereby a polynomial fit is calculated for a nominal configuration of the optical system and which can be used to estimate critical dimensions for other configurations.

Claims

1. A method of calibrating a photolithographic system, the method being implemented by a computer, comprising:

obtaining a plurality of measured dimensions of circuit patterns generated by the photolithographic system using a configuration of a photolithographic process, wherein the configuration of the photolithographic process includes a plurality of values of parameters related to the projection of an image associated with the circuit patterns by the photolithographic system;

generating, using the computer, a plurality of estimated dimensions of the circuit patterns using a model of the configuration of the photolithographic process;

applying a polynomial expansion that approximates changes in the estimated dimensions based on changes in values of the parameters of the configuration; and

calibrating, using the computer, the photolithographic process based on the polynomial expansion, wherein calibrating the photolithographic process includes the step of minimizing differences between the estimated and measured dimensions using an optimization algorithm, and wherein the calibrated photolithographic process includes a plurality of calculated values of the parameters.

2. The method of claim 1, wherein the estimated and measured dimensions include dimensions defining contour shapes of the circuit patterns.

3. The method of claim 1, wherein the step of minimizing differences includes minimizing the sum of squared differences between the estimated and measured dimensions.

4. The method of claim 1, wherein certain of the estimated and measured dimensions relate to critical dimensions of the circuit patterns.

5. The method of claim 4, wherein calibrating the photolithographic process includes determining a linear relationship between at least one optical parameter and one or more estimated critical dimensions.

6. The method of claim 4, wherein calibrating the photolithographic process includes determining a linear relationship between at least one optical parameter and the plurality of estimated dimensions and a second or higher order relationship between at least one optical parameter and one or more estimated critical dimensions.

7. The method of claim 1, wherein calibrating the photolithographic process includes computing the estimated dimensions using a fitted polynomial of selected parameters.

8. The method of claim 7, wherein calculating the values of the parameters further includes using differential transmission cross coefficients.

9. The method of claim 1, wherein calculating the values of the parameters includes performing a least square approximation for each one of the plurality of estimated dimensions using.

10. A computer readable medium bearing a computer program for calibrating a photolithographic system, the computer program, when executed, causing a computer to perform the method of claim 1.

11. A device manufacturing method comprising the steps of:

(a) providing a substrate that is at least partially covered by a layer of radiation-sensitive material;

(b) providing a projection beam of radiation using an imaging system and generating a mask utilized to cause the projection beam to have a pattern in its cross-section;

(c) projecting the patterned beam of radiation onto a target portion of the layer of radiation-sensitive material, wherein, generating in step (b) comprises

obtaining a plurality of measured dimensions of circuit patterns generated by the imaging system using a configuration of a photolithographic process, wherein the configuration of the photolithographic process includes a plurality of values of parameters related to the projection of the patterned beam of radiation by the imaging system;

generating, using the computer, a plurality of estimated dimensions of the circuit patterns using a model of the configuration of the photolithographic process;

applying a polynomial expansion that approximates changes in the estimated dimensions based on changes in values of the parameters of the configuration; and

calibrating, using the computer, the photolithographic process based on the polynomial expansion, wherein calibrating the photolithographic process includes the step of minimizing differences between the estimated and measured dimensions using an optimization algorithm, and wherein the calibrated photolithographic process includes a plurality of calculated values of the parameters.