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Thin film transistor and method of manufacturing the same

  • US 8,420,457 B2
  • Filed: 03/13/2009
  • Issued: 04/16/2013
  • Est. Priority Date: 03/13/2008
  • Status: Active Grant
First Claim
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1. A method of manufacturing a thin film transistor, comprising:

  • forming a transparent channel pattern on a substrate;

    forming a transparent gate insulating layer in contact with the channel pattern;

    forming a passivation film pattern on the channel pattern;

    plasma-processing at least a portion of the channel pattern exposed through a via hole in the passivation film pattern to form a plasma-processing layer;

    forming a source/drain coupled to the channel pattern through the via hole in the passivation film pattern; and

    forming a gate facing the channel pattern, the gate insulating layer interposed between the gate and the channel pattern,wherein the passivation film pattern includes at least one of polyimide, photoacryl, and spin on glass (SOG) materials.

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