Thin film transistor and method of manufacturing the same
First Claim
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1. A method of manufacturing a thin film transistor, comprising:
- forming a transparent channel pattern on a substrate;
forming a transparent gate insulating layer in contact with the channel pattern;
forming a passivation film pattern on the channel pattern;
plasma-processing at least a portion of the channel pattern exposed through a via hole in the passivation film pattern to form a plasma-processing layer;
forming a source/drain coupled to the channel pattern through the via hole in the passivation film pattern; and
forming a gate facing the channel pattern, the gate insulating layer interposed between the gate and the channel pattern,wherein the passivation film pattern includes at least one of polyimide, photoacryl, and spin on glass (SOG) materials.
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Abstract
A thin film transistor, including a transparent channel pattern, a transparent gate insulating layer in contact with the channel pattern, a passivation film pattern disposed on the channel pattern, a source/drain coupled to the channel pattern through a via hole in the passivation film pattern, and a gate facing the channel pattern, the gate insulating layer interposed between the gate and the channel pattern, wherein the passivation film pattern includes at least one of polyimide, photoacryl, and spin on glass (SOG).
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Citations
14 Claims
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1. A method of manufacturing a thin film transistor, comprising:
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forming a transparent channel pattern on a substrate; forming a transparent gate insulating layer in contact with the channel pattern; forming a passivation film pattern on the channel pattern; plasma-processing at least a portion of the channel pattern exposed through a via hole in the passivation film pattern to form a plasma-processing layer; forming a source/drain coupled to the channel pattern through the via hole in the passivation film pattern; and forming a gate facing the channel pattern, the gate insulating layer interposed between the gate and the channel pattern, wherein the passivation film pattern includes at least one of polyimide, photoacryl, and spin on glass (SOG) materials. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14)
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Specification
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Current AssigneeSamsung Display Company Limited (Samsung Electronics Co. Ltd.)
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Original AssigneeSamsung Display Company Limited (Samsung Electronics Co. Ltd.)
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InventorsKim, Min-Kyu, Ahn, Tae-Kyung, Jeong, Jae-Kyeong
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Primary Examiner(s)TRINH, MICHAEL MANH
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Application NumberUS12/382,341Publication NumberTime in Patent Office1,495 DaysField of Search438/158, 438/161, 438/151, 438/164, 438/149, 257/E21.414US Class Current438/149CPC Class CodesH01L 29/7869 having a semiconductor body...
