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Group III-V semiconductor device and method for producing the same

  • US 8,420,502 B2
  • Filed: 02/22/2010
  • Issued: 04/16/2013
  • Est. Priority Date: 03/16/2007
  • Status: Expired due to Fees
First Claim
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1. A method for producing a Group III-V semiconductor device, the method comprising:

  • forming, on a base, a plurality of semiconductor devices isolated from one another;

    forming, through an ion implantation, a high-resistance region in a surface layer of a side surface of each semiconductor device;

    after the forming of the high-resistance region, forming a p-electrode and a low-melting-point metal diffusion prevention layer on a top surface of the semiconductor device;

    bonding the semiconductor device to a conductive support substrate via a low-melting-point metal layer comprising at least one selected from a group consisting of Au—

    Sn, Au—

    Si, Ag—

    Sn—

    Cu, and Sn—

    Bi; and

    removing the base through a laser lift-off process,wherein the side surface of the semiconductor device is formed to be inclined so that the device has a cross-sectional area gradually increasing toward the base, and the ion implantation is performed along a direction normal to a main plane of the base.

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