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Oxide semiconductor device

  • US 8,421,067 B2
  • Filed: 07/29/2010
  • Issued: 04/16/2013
  • Est. Priority Date: 07/31/2009
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • a gate electrode layer over an insulating surface;

    a gate insulating layer over the gate electrode layer;

    a source electrode layer and a drain electrode layer over the gate insulating layer;

    an oxide semiconductor layer over the gate insulating layer and overlapping above parts of the source electrode layer and the drain electrode layer; and

    an oxide insulating layer over the oxide semiconductor layer,wherein the oxide semiconductor layer includes a channel formation region over the gate electrode layer,wherein the source electrode layer and the drain electrode layer do not overlap with the gate electrode layer,wherein side surfaces of the source electrode layer and the drain electrode layer are in contact with parts of the oxide semiconductor layer, andwherein the oxide insulating layer is in contact with the channel formation region in the oxide semiconductor layer.

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