Integrated CMOS and MEMS with air dielectric method and system
First Claim
1. A method for fabricated a monolithic integrated CMOS and MEMS device, the method comprising:
- providing a first semiconductor substrate having a first surface region;
forming one or more CMOS integrated circuit devices provided on a CMOS integrated circuit device region overlying the first surface region, the CMOS integrated circuit device region having a CMOS surface region;
forming a dielectric layer overlying the CMOS surface region;
joining a second semiconductor substrate having a second surface region to the CMOS surface region by bonding the second surface region to the dielectric layer, the second semiconductor being patterned such that one or more portions of the second semiconductor substrate within a vicinity of the one or more CMOS integrated devices are removed to form one or more first air dielectric regions;
thinning the first substrate to a desired thickness while maintaining attachment to the CMOS integrated device region; and
forming one or more free standing MEMS structures overlying one or more portions of the desired thickness of the first semiconductor substrate.
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Abstract
A method and structure for fabricating a monolithic integrated CMOS and MEMS device. The method includes providing a first semiconductor substrate having a first surface region and forming one or more CMOS IC devices on a CMOS IC device region overlying the first surface region. The CMOS IC device region can also have a CMOS surface region. A bonding material can be formed overlying the CMOS surface region to form an interface by which a second semiconductor substrate can be joined to the CMOS surface region. The second semiconductor substrate having a second surface region to the CMOS surface region by bonding the second surface region to the bonding material, the second semiconductor substrate comprising one or more first air dielectric regions. One or more free standing MEMS structures can be formed within one or more portions of the processed first substrate.
53 Citations
28 Claims
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1. A method for fabricated a monolithic integrated CMOS and MEMS device, the method comprising:
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providing a first semiconductor substrate having a first surface region; forming one or more CMOS integrated circuit devices provided on a CMOS integrated circuit device region overlying the first surface region, the CMOS integrated circuit device region having a CMOS surface region; forming a dielectric layer overlying the CMOS surface region; joining a second semiconductor substrate having a second surface region to the CMOS surface region by bonding the second surface region to the dielectric layer, the second semiconductor being patterned such that one or more portions of the second semiconductor substrate within a vicinity of the one or more CMOS integrated devices are removed to form one or more first air dielectric regions; thinning the first substrate to a desired thickness while maintaining attachment to the CMOS integrated device region; and forming one or more free standing MEMS structures overlying one or more portions of the desired thickness of the first semiconductor substrate. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28)
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Specification