Light emitting device and light emitting device package

• US 8,421,110 B2
• Filed: 12/13/2011
• Issued: 04/16/2013
• Est. Priority Date: 02/12/2010
• Status: Active Grant

• Current Assignee: Suzhou Lekin Semiconductor Company Limited
• Original Assignee: LG Innotek Company Limited (LG Corporation)
• Inventors: Jo, Kyoung Woo, Kim, Sun Kyung, Choi, Woon Kyung
• Primary Examiner(s): Vu, David
• Assistant Examiner(s): TAYLOR, EARL N
• Application Number:
  US13/324,785
• Publication Number:
  US 20120086036A1
• Time in Patent Office: 490 Days
• Field of Search: 257/98, 257/E33.067, 257/E33.068
• US Class Current: 257/98
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01055 Cesium [Cs]
• CPC Class Codes: H01L 2924/01068 Erbium [Er]
• CPC Class Codes: H01L 2924/01322 Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
• CPC Class Codes: H01L 2924/12032 Schottky diode
• CPC Class Codes: H01L 2933/0083 Periodic patterns for optical field-shaping in or on the semiconductor body or semiconductor body package, e.g. photonic bandgap structures
• CPC Class Codes: H01L 33/0095 Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
• CPC Class Codes: H01L 33/405 Reflective materials
• CPC Class Codes: H01L 33/44 characterised by the coatings, e.g. passivation layer or anti-reflective coating
• CPC Class Codes: H01L 33/50 Wavelength conversion elements
• CPC Class Codes: H01L 33/508 having a non-uniform spatial arrangement or non-uniform concentration, e.g. patterned wavelength conversion layer, wavelength conversion layer with a concentration gradient of the wavelength conversion material
• CPC Class Codes: H01L 33/58 Optical field-shaping elements

Abstract

Disclosed are a light emitting device, a method of manufacturing the same and a light emitting device package. The light emitting device of the embodiment includes a light emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer and an active layer between the first and second conductive semiconductor layers; a fluorescent layer on the light emitting structure; and a light extracting structure on the fluorescent layer. The light extracting structure extracts light, which is generated in the light emitting structure and incident into an interfacial surface between the fluorescent layer and the light extracting structure, to an outside of the light emitting structure.

Claims

1. A light emitting device comprising:

a light emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer and an active layer between the first and second conductive semiconductor layers;

a fluorescent layer on the light emitting structure;

a light extracting structure on the fluorescent layer;

a second electrode layer under the light emitting structure; and

a Current Blocking Layer (CBL) between the light emitting structure and the second electrode layer,

wherein the light extracting structure extracts light which is generated in the light emitting structure and incident into an interfacial surface between the fluorescent layer and the light extracting structure to an outside of the light emitting structure,

wherein at least one upper portion of the fluorescent layer is exposed through the light extracting structure, and

wherein the second electrode layer includes at least one of an ohmic layer, a reflection layer, a junction layer, and a support substrate.

2. The light emitting device as claimed in claim 1, wherein an emission distribution of light in the fluorescent layer is directed in a vertical direction rather than a lateral direction during the light is extracted by the light extracting structure.

3. The light emitting device as claimed in claim 1, wherein the light extracting structure comprises a periodic or non-periodic pattern.

4. The light emitting device as claimed in claim 1, wherein the fluorescent layer has a uniform thickness.

5. The light emitting device as claimed in claim 1, wherein the light extracting structure comprises a dielectric substance including at least one of oxide, nitride and chloride.

6. The light emitting device as claimed in claim 1, wherein the light extracting structure comprises a material having a refractive index different from that of the fluorescent layer.

7. The light emitting device as claimed in claim 3, wherein the light extracting structure has the periodic pattern, wherein the periodic pattern has a period of 50 nm to 3000 nm.

11. The light emitting device as claimed in claim 2, wherein the light extracting structure comprises a periodic or non-periodic pattern.

12. The light emitting device as claimed in claim 2, wherein the fluorescent layer has a uniform thickness.

13. The light emitting device as claimed in claim 2, wherein the light extracting structure comprises a dielectric substance including at least one of oxide, nitride and chloride.

14. The light emitting device as claimed in claim 2, wherein the light extracting structure comprises a material having a refractive index different from that of the fluorescent layer.

15. The light emitting device as claimed in claim 11, wherein the light extracting structure has the periodic pattern, wherein the periodic pattern has a period of 50 nm to 3000 nm.

8. A light emitting device comprising:

a light emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer and an active layer between the first and second conductive semiconductor layers;

a fluorescent layer on the light emitting structure;

a light extracting structure on the fluorescent layer;

a protection member below the light emitting structure;

a second electrode layer under the light emitting structure,

wherein the light extracting structure extracts light which is generated in the light emitting structure and incident into an interfacial surface between the fluorescent layer and the light extracting structure to an outside of the light emitting structure,

wherein at least one upper portion of the fluorescent layer is exposed through the light extracting structure,

wherein the second electrode layer includes at least one of an ohmic layer, a reflection layer, a junction layer, and a support substrate, and

wherein the protection member is formed circumferentially between the light emitting structure and the junction layer.

9. The light emitting device as claimed in claim 8, wherein at least a part of the protection member is overlapped with the light emitting structure in a vertical direction.

10. The light emitting device as claimed in claim 8, further comprising a second electrode layer under the light emitting structure,

wherein the second electrode layer includes at least one of an ohmic layer, a reflection layer, a junction layer, and a support substrate, and

wherein the protection member comprises at least one of an electric insulative material, a material having lower electric conductivity than the reflection layer or the junction layer, or a material forming a Schottky connection with the second conductive semiconductor layer.