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Regenerative building block and diode bridge rectifier and methods

  • US 8,421,118 B2
  • Filed: 01/23/2009
  • Issued: 04/16/2013
  • Est. Priority Date: 09/26/2007
  • Status: Active Grant
First Claim
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1. A semiconductor device operable as a half bridge, the semiconductor device comprising:

  • a first metal-oxide-semiconductor (MOS) component comprising a first gate region, a first source region, a first drain region, and a first probe region, wherein the first MOS component is arranged such that, in response to the first MOS component being reverse-biased between the first source region and the first drain region, the first probe region produces a first signal indicating the reverse-biased state;

    a second MOS component comprising a second gate region, a second source region, a second drain region, and a second probe region, wherein the second MOS component is arranged such that, in response to the second MOS component being reverse-biased between the second source region and the second drain region, the second probe region produces a second signal indicating the reverse-biased state;

    a first drain contact operatively coupled to the first drain region;

    a second drain contact operatively coupled to the second drain region; and

    a first source contact operatively coupled to the first source region and the second source region,wherein the semiconductor device is arranged such that a conductivity of the second MOS component is controlled based at least in part on the first signal and a conductivity of the first MOS component is controlled based at least in part on the second signal.

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