Regenerative building block and diode bridge rectifier and methods

• US 8,421,118 B2
• Filed: 01/23/2009
• Issued: 04/16/2013
• Est. Priority Date: 09/26/2007
• Status: Active Grant

• Current Assignee: STMicroelectronics International N.V. (STMicroelectronics NV)
• Original Assignee: STMicroelectronics NV
• Inventors: Ankoudinov, Alexei, Rodov, Vladimir
• Primary Examiner(s): Such, Matthew W
• Assistant Examiner(s): JOY, JEREMY J
• Application Number:
  US12/359,094
• Publication Number:
  US 20090185404A1
• Time in Patent Office: 1,544 Days
• Field of Search: 363126-128, 257/107, 257/119, 257/126, 257/127, 257/130, 257/133, 257/138, 327/574, 438134-138, 438/140
• US Class Current: 257/124
• CPC Class Codes: H01L 27/0817 Thyristors only
• CPC Class Codes: H01L 29/0646 PN junctions
• CPC Class Codes: H01L 29/66075 of devices having semiconductor bodies comprising group 14 or group 13/15 materials comprising semiconducting carbon H01L29/66015; comprising crystalline silicon carbide H01L29/66053
• CPC Class Codes: H01L 29/66477 with an insulated gate, i.e. MISFET
• CPC Class Codes: H01L 29/78 with field effect produced by an insulated gate H01L29/7725, H01L29/775, H01L29/778 take precedence
• CPC Class Codes: H01L 29/7802 Vertical DMOS transistors, i.e. VDMOS transistors
• CPC Class Codes: H01L 29/861 Diodes

Abstract

A rectifier building block has four electrodes: source, drain, gate and probe. The main current flows between the source and drain electrodes. The gate voltage controls the conductivity of a narrow channel under a MOS gate and can switch the RBB between OFF and ON states. Used in pairs, the RBB can be configured as a three terminal half-bridge rectifier which exhibits better than ideal diode performance, similar to synchronous rectifiers but without the need for control circuits. N-type and P-type pairs can be configured as a full bridge rectifier. Other combinations are possible to create a variety of devices.

Claims

1. A semiconductor device operable as a half bridge, the semiconductor device comprising:

a first metal-oxide-semiconductor (MOS) component comprising a first gate region, a first source region, a first drain region, and a first probe region, wherein the first MOS component is arranged such that, in response to the first MOS component being reverse-biased between the first source region and the first drain region, the first probe region produces a first signal indicating the reverse-biased state;

a second MOS component comprising a second gate region, a second source region, a second drain region, and a second probe region, wherein the second MOS component is arranged such that, in response to the second MOS component being reverse-biased between the second source region and the second drain region, the second probe region produces a second signal indicating the reverse-biased state;

a first drain contact operatively coupled to the first drain region;

a second drain contact operatively coupled to the second drain region; and

a first source contact operatively coupled to the first source region and the second source region,

wherein the semiconductor device is arranged such that a conductivity of the second MOS component is controlled based at least in part on the first signal and a conductivity of the first MOS component is controlled based at least in part on the second signal.

2. The semiconductor device of claim 1, wherein the first MOS component comprises an opening formed in the first gate region, and

wherein the first probe region is formed in the opening.

3. The semiconductor device of claim 2, wherein the second MOS component comprises a second opening formed in the second gate region, and

wherein the second probe region is formed in the second opening.

4. The semiconductor device of claim 2, wherein the first probe region is directly coupled to the second gate region and the second probe region is directly coupled to the first gate region.

5. The semiconductor device of claim 2, wherein the first probe region comprises a heavily-doped semiconductor material.

6. The semiconductor device of claim 5, wherein the heavily-doped semiconductor material of the first probe region is of a same conductivity type as the first source region.

7. The semiconductor device of claim 1, wherein the first MOS component and the second MOS component are of a same conductivity type.

8. The semiconductor device of claim 1, wherein, when the semiconductor device is operated, the first MOS component controls the conductivity of the second MOS component via a regenerative signal provided from the first probe region to the second gate region, the first signal being the regenerative signal.

9. The semiconductor device of claim 8, wherein, when the semiconductor device is operated, the second MOS component controls the conductivity of the first MOS component via a second regenerative signal provided from the second probe region to the first gate region, the second signal being the second regenerative signal.

10. The semiconductor device of claim 1, wherein, when the semiconductor device is operated, the first probe region outputs the first signal indicating whether the first MOS component is conductive or nonconductive when the first MOS component is reverse-biased.

11. The semiconductor device of claim 1, wherein the semiconductor device is a half-bridge rectifier.

12. The semiconductor device of claim 11, wherein the semiconductor device is a three-terminal half-bridge rectifier having one input terminal and two output terminals, the one input terminal being coupled to the first source contact, a first output terminal being coupled to the first drain contact, and the second output terminal being coupled to the second drain contact.

13. The semiconductor device of claim 11, wherein the semiconductor device is a three-terminal half-bridge rectifier having two input terminals and one output terminal, a first input terminal being coupled to the first drain contact, a second input terminal being coupled to the second drain contact, and the one input terminal being coupled to the first source contact.

14. A metal-oxide-semiconductor (MOS) device comprising:

a gate region;

an opening formed in the gate region;

a probe region formed in the opening;

a gate electrode coupled to the gate region; and

a probe electrode coupled to the probe region, wherein the probe electrode is different from the gate electrode,

wherein the MOS device is arranged such that, during operation, in response to the MOS device being reverse-biased between a source region and a drain region of the MOS device, the probe electrode outputs a signal indicating the reverse-biased state.

15. The MOS device of claim 14, further comprising:

a source electrode coupled to the source region; and

a drain electrode coupled to the drain region.

16. The MOS device of claim 14, wherein the probe electrode is arranged to output, during operation of the MOS device, a signal indicating a conductivity of the MOS device.

17. The MOS device of claim 16, wherein the MOS device is arranged such that, during operation of the MOS device,

when the MOS device is reverse-biased between the source region and the drain region of the MOS device at a first voltage, the signal output by the probe electrode follows a voltage at the drain region and,

when the MOS device is reverse-biased between the source region and the drain region of the MOS device at a second voltage higher than the first voltage, the signal output by the probe electrode is independent of a voltage at the drain region.

18. The MOS device of claim 17, wherein the MOS device is arranged such that a voltage level of the signal output by the probe electrode is nearly constant when a source-to-drain voltage meets or exceeds the second voltage.

19. The MOS device of claim 16, wherein the signal output by the first probe electrode is a regenerative signal.

20. The MOS device of claim 14, wherein the probe region comprises a heavily-doped semiconductor material.

21. The MOS device of claim 20, wherein the heavily-doped semiconductor material of the probe region is of a same conductivity type as the source region.

22. The MOS device of claim 14, further comprising an epitaxial layer, wherein the probe region is formed in the epitaxial layer.

23. The MOS device of claim 14, further comprising an insulating region to insulate the gate electrode from the probe electrode.

24. A semiconductor device comprising:

a first metal-oxide-semiconductor (MOS) component comprising a first gate region, a first source region, a first drain region, and a first probe region; and

a second MOS component comprising a second gate region, a second source region, a second drain region, and a second probe region;

wherein a first voltage level of the first gate region follows a second voltage level of the second probe region and a third voltage level of the second gate region follows a fourth voltage level of the first probe region, and

wherein the second voltage level of the second probe region is set based on whether relative voltage values of the second drain region and the second source region make the second MOS component conductive and the fourth voltage level of the first probe region is set based on whether relative voltage values of the first drain region and the first second region make the first MOS component conductive.

25. The semiconductor device of claim 24, wherein the semiconductor device is a three-terminal device having three terminals, wherein a first terminal is coupled to the first source region and the second source region, a second terminal is coupled to the first drain region, and a third terminal is coupled to the second drain region.

26. The semiconductor device of claim 24, wherein the first MOS component comprises an opening formed in the first gate region, and

wherein the first probe region is formed in the opening.

27. The semiconductor device of claim 26, wherein the second MOS component comprises a second opening formed in the second gate region, and

wherein the second probe region is formed in the second opening.

28. The semiconductor device of claim 24, wherein the first probe region is directly coupled to the second gate region and the second probe region is directly coupled to the first gate region.

29. The semiconductor device of claim 24, wherein a fifth voltage level at the first source region follows a sixth voltage level at the second source region.

30. The semiconductor device of claim 24, wherein the semiconductor device is arranged such that the first MOS component is able to control a conductivity of the second MOS component and the second MOS component is able to control a conductivity of the first MOS component.

31. The semiconductor device of claim 30, wherein, when the semiconductor device is operated, the first MOS component controls the conductivity of the second MOS component via a regenerative signal provided from the first probe region to the second gate region.

32. The semiconductor device of claim 24, wherein the first MOS component and the second MOS component are of a same conductivity type.

33. The semiconductor device of claim 24, wherein, when the semiconductor device is operated, the first probe region outputs a signal indicating whether the first MOS component is conductive or nonconductive.

34. The semiconductor device of claim 24, wherein the semiconductor device is a half-bridge rectifier.

35. A semiconductor device comprising:

a first metal-oxide-semiconductor (MOS) component comprising a first gate region, a first source region, a first drain region, and a first probe region; and

a second MOS component comprising a second gate region, a second source region, a second drain region, and a second probe region;

wherein the first probe region is arranged to control a conductivity of the second MOS component based on whether the first MOS component is reverse-biased and the second probe region is arranged to control a conductivity of the first MOS component based on whether the second MOS component is reverse-biased.

36. The semiconductor device of claim 35, wherein the first probe region is arranged to control a conductivity of the second MOS component based on whether the first MOS component is reverse-biased between the first source region and the first drain region, and

the second probe region is arranged to control a conductivity of the first MOS component based on whether the second MOS component is reverse-biased between the second source region and the second drain region.

37. The semiconductor device of claim 35, wherein the semiconductor device is a three-terminal device having three terminals, wherein a first terminal is coupled to the first source region and the second source region, a second terminal is coupled to the first drain region, and a third terminal is coupled to the second drain region.

38. The semiconductor device of claim 35, wherein the first MOS component comprises an opening formed in the first gate region, and

wherein the first probe region is formed in the opening.

39. The semiconductor device of claim 38, wherein the second MOS component comprises a second opening formed in the second gate region, and

wherein the second probe region is formed in the second opening.

40. The semiconductor device of claim 35, wherein the first probe region is directly coupled to the second gate region and the second probe region is directly coupled to the first gate region.

41. The semiconductor device of claim 35, wherein the first source region and the second source region are arranged to maintain a same voltage level.

42. The semiconductor device of claim 35, wherein the first probe region is arranged to output a first signal when a voltage level of the first drain region exceeds a voltage level of the first source region, and

wherein the second MOS component is arranged in the semiconductor device such that the conductivity of the second MOS component is set based at least in part on the first signal.

43. The semiconductor device of claim 42, wherein the second probe region is arranged to output a second signal when a voltage level of the second drain region exceeds a voltage level of the second source region, and

wherein the first MOS component is arranged in the semiconductor device such that the conductivity of the first MOS component is set based at least in part on the second signal.

44. The semiconductor device of claim 42, wherein, when the semiconductor device is operated, the first MOS component controls the conductivity of the second MOS component via a regenerative signal provided from the first probe region to the second gate region, the first signal being the regenerative signal.

45. The semiconductor device of claim 35, wherein the first MOS component and the second MOS component are of a same conductivity type.

46. The semiconductor device of claim 35, wherein, when the semiconductor device is operated, the first probe region outputs a signal indicating whether the first MOS component is conductive or nonconductive.

47. The semiconductor device of claim 35, wherein the semiconductor device is a half-bridge rectifier.