Microelectromechanical device including an encapsulation layer of which a portion is removed to expose a substantially planar surface having a portion that is disposed outside and above a chamber and including a field region on which integrated circuits are formed, and methods for fabricating same

• US 8,421,167 B2
• Filed: 11/23/2010
• Issued: 04/16/2013
• Est. Priority Date: 06/04/2003
• Status: Expired due to Term

• Current Assignee: Robert Bosch GmbH
• Original Assignee: Robert Bosch GmbH
• Inventors: Partridge, Aaron, Lutz, Markus, Kronmueller, Silvia
• Primary Examiner(s): Smith, Zandra
• Assistant Examiner(s): Payen, Marvin
• Application Number:
  US12/952,895
• Publication Number:
  US 20110221013A1
• Time in Patent Office: 875 Days
• Field of Search: 257/415, 257/E21.002, 257/E23.194
• US Class Current: 257/415
• CPC Class Codes: B81B 2207/015 the micromechanical device and the control or processing electronics being integrated on the same substrate
• CPC Class Codes: B81C 1/00261 Processes for packaging MEMS devices MEMS packages B81B7/0032, packaging of smart-MEMS B81C1/0023
• CPC Class Codes: B81C 1/00301 Connecting electric signal lines from the MEMS device with external electrical signal lines, e.g. through vias
• CPC Class Codes: B81C 2201/0176 Chemical vapour Deposition
• CPC Class Codes: B81C 2203/0136 Growing or depositing of a covering layer
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

There are many inventions described and illustrated herein. In one aspect, the present invention is directed to a MEMS device, and technique of fabricating or manufacturing a MEMS device, having mechanical structures encapsulated in a chamber prior to final packaging. The material that encapsulates the mechanical structures, when deposited, includes one or more of the following attributes: low tensile stress, good step coverage, maintains its integrity when subjected to subsequent processing, does not significantly and/or adversely impact the performance characteristics of the mechanical structures in the chamber (if coated with the material during deposition), and/or facilitates integration with high-performance integrated circuits. In one embodiment, the material that encapsulates the mechanical structures is, for example, silicon (polycrystalline, amorphous or porous, whether doped or undoped), silicon carbide, silicon-germanium, germanium, or gallium-arsenide.

Claims

1. A microelectromechanical device comprising:

a substrate;

a chamber;

a micromachined mechanical structure at least partially disposed in the chamber;

a first encapsulation layer comprising a permeable material having a plurality of pores, wherein;

the first encapsulation layer is disposed over both the micromachined mechanical structure and the substrate, and

the first encapsulation layer forms at least a portion of a wall of the chamber; and

a second encapsulation layer comprising a semiconductor material disposed over the first encapsulation layer and sealing the chamber by filling the plurality of pores, wherein;

a portion of the second encapsulation layer having been removed to expose a substantially planar surface, and

the substantially planar surface is adapted to provide a base upon which integrated circuits are formed.

2. The microelectromechanical device of claim 1, wherein:

the first encapsulation layer comprises a semiconductor material doped with a first impurity with a first conductivity type, and

the semiconductor material of the second encapsulation layer is doped with a second impurity with a second conductivity type, wherein the first conductivity type is different than the second conductivity type.

3. The microelectromechanical device of claim 2, wherein a first portion of the substantially planar surface is disposed outside and above the chamber and includes a field region upon which the integrated circuits are formed.

4. The microelectromechanical device of claim 3, wherein the field region comprises a monocrystalline semiconductor material.

5. The microelectromechanical device of claim 4, wherein the integrated circuits comprise data processing electronics.

6. The microelectromechanical device of claim 3, further comprising a contact at least partially disposed outside the chamber to electrically couple the micromachined mechanical structure to the integrated circuits, interface circuitry, or external devices.

7. The microelectromechanical device of claim 6, wherein the contact comprises a semiconductor material doped with an impurity to provide increased electrical conductivity.

8. The microelectromechanical device of claim 6, further comprising an insulation layer disposed on at least a portion of the second encapsulation layer and including an opening over the contact, and an electrically conductive material disposed within the opening over the contact and on at least a portion of the insulation layer.

9. The microelectromechanical device of claim 2, wherein each of the first encapsulation layer and the second encapsulation layer comprises silicon, germanium, silicon/germanium, silicon carbide, or gallium arsenide.

10. The microelectromechanical device of claim 2, further comprising a third encapsulation layer disposed over the second encapsulation layer.

11. The microelectromechanical device of claim 10, wherein the third encapsulation layer comprises an insulating or metal material.

12. A microelectromechanical device comprising:

a substrate;

a chamber;

a micromachined mechanical structure at least partially disposed in the chamber;

a first encapsulation layer comprising a material having a plurality of vents, wherein;

the first encapsulation layer is disposed over both the micromachined mechanical structure and the substrate, and

the first encapsulation layer forms at least a portion of a wall of the chamber; and

a second encapsulation layer comprising a semiconductor material disposed over the first encapsulation layer and sealing the chamber by filling the plurality of vents, wherein;

a portion of the second encapsulation layer having been removed to expose a substantially planar, and

the substantially planar surface is adapted to provide a base upon which integrated circuits are formed.

13. The microelectromechanical device of claim 12, wherein:

the first encapsulation layer comprises a semiconductor material doped with a first impurity with a first conductivity type, and

the semiconductor material of the second encapsulation layer is doped with a second impurity with a second conductivity type, wherein the first conductivity type is different than the second conductivity type.

14. The microelectromechanical device of claim 13, wherein a first portion of the substantially planar surface is disposed outside and above the chamber and includes a field region upon which the integrated circuits are formed.

15. The microelectromechanical device of claim 14, wherein the field region comprises a monocrystalline semiconductor material.

16. The microelectromechanical device of claim 15, wherein the integrated circuits comprise data processing electronics.

17. The microelectromechanical device of claim 14, further comprising a contact at least partially disposed outside the chamber to electrically couple the micromachined mechanical structure to the integrated circuits, interface circuitry, or external devices.

18. The microelectromechanical device of claim 17, wherein the contact comprises a semiconductor material doped with an impurity to provide increased electrical conductivity.

19. The microelectromechanical device of claim 17, further comprising an insulation layer disposed on at least a portion of the second encapsulation layer and including an opening over the contact, and an electrically conductive material disposed within the opening over the contact and on at least a portion of the insulation layer.

20. The microelectromechanical device of claim 13, wherein each of the first encapsulation layer and the second encapsulation layer comprises silicon, germanium, silicon/germanium, silicon carbide, or gallium arsenide.

21. The microelectromechanical device of claim 13, further comprising a third encapsulation layer disposed over the second encapsulation layer.

22. The microelectromechanical device of claim 21, wherein the third encapsulation layer comprises an insulating or metal material.

23. A microelectromechanical device comprising:

a substrate;

a chamber;

a micromachined mechanical structure at least partially disposed in the chamber;

a first encapsulation layer disposed over both the micromachined mechanical structure and the substrate, wherein;

no intervening layers reside between the micromachined mechanical structure and the first encapsulation layer,

the first encapsulation layer forms at least a portion of a wall of the chamber, and

the first encapsulation layer has one or more vents formed therein to provide access to at least a portion of the micromachined mechanical structure; and

a second encapsulation layer disposed over the first encapsulation layer and sealing the chamber by filling the one or more vents, wherein;

no intervening layers reside between the first encapsulation layer and the second encapsulation layer, and

the first encapsulation layer and the second encapsulation layer comprise the same material.

24. The microelectromechanical device of claim 23, wherein the micromachined mechanical structure is disposed over the substrate or formed from at least a portion of the substrate.

25. The microelectromechanical device of claim 23, wherein at least a portion of the second encapsulation layer provides a substantially planar surface upon which integrated circuits are fabricated.

26. The microelectromechanical device of claim 25, wherein at least a portion of the substantially planar surface comprises a field region.

27. The microelectromechanical device of claim 26, wherein the field region comprises a monocrystalline semiconductor material.

28. The microelectromechanical device of claim 27, further comprising integrated circuits disposed in the field region.

29. The microelectromechanical device of claim 28, wherein the integrated circuits comprise data processing electronics.

30. The microelectromechanical device of claim 23, further comprising a contact at least partially disposed outside the chamber.

31. The microelectromechanical device of claim 30, wherein the contact comprises a semiconductor material doped with an impurity to provide increased electrical conductivity.

32. The microelectromechanical device of claim 31, further comprising an insulation layer disposed on at least a portion of the second encapsulation layer and including an opening over the contact, and an electrically conductive material disposed within the opening over the contact and on at least a portion of the insulation layer.

33. The microelectromechanical device of claim 23, wherein the first encapsulation layer and the second encapsulation layer comprise polycrystalline silicon, porous polycrystalline silicon, amorphous silicon, germanium, silicon/germanium, silicon carbide, or gallium arsenide.