Semiconductor device and automotive ac generator
First Claim
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1. A semiconductor device comprising:
- a semiconductor element;
a support member having a Ni-plated connecting part; and
bonding material bonding the Ni-plated connecting part of the support member to the semiconductor element,wherein the bonding material is a Sn—
Cu two-element bonding material forming a Sn-solder having a Cu content of 5 to 7% by mass and containing Cu6Sn5 grains, andwherein the Cu6Sn5 grains form a barrier layer between the Sn-solder and the Ni-plated connecting part at the interface between the support member and bonding material.
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Abstract
A semiconductor device includes a semiconductor element, a support member bonded to a first surface of the semiconductor element with a first bonding material and a lead electrode bonded to a second surface of the semiconductor element supported on the support member with a second bonding material, and further including a method of producing the semiconductor device. Respective connecting parts of the support member and the lead electrode are Ni-plated and each of the first and the second bonding material is a Sn solder having a Cu6Sn5 content greater than a eutectic content.
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Citations
6 Claims
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1. A semiconductor device comprising:
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a semiconductor element; a support member having a Ni-plated connecting part; and bonding material bonding the Ni-plated connecting part of the support member to the semiconductor element, wherein the bonding material is a Sn—
Cu two-element bonding material forming a Sn-solder having a Cu content of 5 to 7% by mass and containing Cu6Sn5 grains, andwherein the Cu6Sn5 grains form a barrier layer between the Sn-solder and the Ni-plated connecting part at the interface between the support member and bonding material. - View Dependent Claims (2, 3, 4, 5, 6)
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Specification