Liquid crystal display device and process for producing liquid crystal display device

• US 8,421,967 B2
• Filed: 10/25/2007
• Issued: 04/16/2013
• Est. Priority Date: 12/14/2006
• Status: Active Grant

• Current Assignee: Sharp Kabushiki Kaisha (Hon Hai Precision Industry Co., Ltd.)
• Original Assignee: Sharp Kabushiki Kaisha (Hon Hai Precision Industry Co., Ltd.)
• Inventors: Kikuchi, Tetsuo, Kitagawa, Hideki, Imai, Hajime, Hara, Yoshihito
• Primary Examiner(s): Glick, Edward
• Assistant Examiner(s): Nguyen, Sang V
• Application Number:
  US12/518,719
• Publication Number:
  US 20100014031A1
• Time in Patent Office: 2,000 Days
• Field of Search: 349/113, 349/114, 445/58
• US Class Current: 349/113
• CPC Class Codes: G02F 1/133553 Reflecting elements associated to illuminating devices G02F1/133605
• CPC Class Codes: G02F 1/133555 Transflectors

Abstract

Transflective-type and reflection-type liquid crystal display devices having a high image quality are provided at low cost.

A liquid crystal display device according to the present invention is a liquid crystal display device having a reflection region for reflecting incident light toward a display surface, the reflection region including a Cs metal layer (metal layer), a gate insulating layer formed on the Cs metal layer, a semiconductor layer formed on the gate insulating layer, and a reflective layer formed on the semiconductor layer. On the surface of the reflective layer, a first recess and a second recess located inside the first recess are formed. The Cs metal layer and the semiconductor layer each have an aperture, and one of the first recess and the second recess is constituted by the aperture of the Cs metal layer, and the other is constituted by the aperture of the semiconductor layer.

Claims

1. A liquid crystal display device comprising:

a reflection region for reflecting incident light toward a display surface, wherein,

the reflection region includes a metal layer, an insulating layer formed on the metal layer, a semiconductor layer formed on the insulating layer, and a reflective layer formed on the semiconductor layer;

a first recess and a second recess located inside the first recess are formed on a surface of the reflective layer in the reflection region;

the metal layer has an aperture or a recess;

the semiconductor layer has an aperture;

one of the first recess and the second recess is formed according to the aperture or recess of the metal layer, and the other of the first recess and the second recess is formed according to the aperture of the semiconductor layer;

wherein the metal layer has a composition which varies along a thickness direction of the metal layer; and

wherein the metal layer is made of molybdenum nitride, and a nitrogen content in the molybdenum nitride of the metal layer decreases toward the insulating layer.