Semiconductor device, and power conversion device using semiconductor device

• US 8,422,235 B2
• Filed: 07/30/2009
• Issued: 04/16/2013
• Est. Priority Date: 08/06/2008
• Status: Active Grant

• Current Assignee: Hitachi Astemo Ltd. (Hitachi, Ltd.)
• Original Assignee: Hitachi Automotive Systems Limited (Hitachi, Ltd.)
• Inventors: Azuma, Katsunori, Mori, Mutsuhiro, Nakatsu, Kinya, Hayakawa, Seiichi, Nishikimi, Fusanori
• Primary Examiner(s): Bui, Hung S
• Assistant Examiner(s): Wu, James
• Application Number:
  US12/920,287
• Publication Number:
  US 20110051371A1
• Time in Patent Office: 1,356 Days
• Field of Search: 361/689, 361/699, 361/736, 363/123, 363/127, 363/140, 363/141, 363/144
• US Class Current: 361/736
• CPC Class Codes: B60K 1/02 comprising more than one electric motor
• CPC Class Codes: B60K 6/445 Differential gearing distribution type
• CPC Class Codes: B60L 2200/26 Rail vehicles
• CPC Class Codes: B60L 2240/423 Torque
• CPC Class Codes: B60W 10/06 including control of combustion engines
• CPC Class Codes: B60W 10/08 including control of electric propulsion units, e.g. motors or generators
• CPC Class Codes: B60W 20/00 Control systems specially adapted for hybrid vehicles hybrid vehicle design, B60K6/00; electric vehicles B60L
• CPC Class Codes: B60W 2710/0644 Engine speed
• CPC Class Codes: B60W 2710/0666 Engine torque
• CPC Class Codes: B60W 2710/083 Torque
• CPC Class Codes: H01L 2224/05599 Material
• CPC Class Codes: H01L 2224/45015 being circular
• CPC Class Codes: H01L 2224/45099 Material
• CPC Class Codes: H01L 2224/451 with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48137 the bodies being arranged next to each other, e.g. on a common substrate
• CPC Class Codes: H01L 2224/48139 with an intermediate bond, e.g. continuous wire daisy chain
• CPC Class Codes: H01L 2224/48472 the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
• CPC Class Codes: H01L 2224/49111 the connectors connecting two common bonding areas, e.g. Litz or braid wires
• CPC Class Codes: H01L 2224/85399 Material
• CPC Class Codes: H01L 23/3735 : Laminates or multilayers, e.g. direct bond copper ceramic substrates
• CPC Class Codes: H01L 23/473 : by flowing liquids H01L23/4332, H01L23/4338 take precedence
• CPC Class Codes: H01L 23/49811 : Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads H01L23/49827 takes precedence
• CPC Class Codes: H01L 23/50 : for integrated circuit devices, e.g. power bus, number of leadsH01L23/482 - H01L23/498 take precedence
• CPC Class Codes: H01L 24/48 : of an individual wire connector
• CPC Class Codes: H01L 24/49 : of a plurality of wire connectors
• CPC Class Codes: H01L 25/072 : the devices being arranged next to each other
• CPC Class Codes: H01L 2924/00 : Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00014 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01004 : Beryllium [Be]
• CPC Class Codes: H01L 2924/01005 : Boron [B]
• CPC Class Codes: H01L 2924/01006 : Carbon [C]
• CPC Class Codes: H01L 2924/01013 : Aluminum [Al]
• CPC Class Codes: H01L 2924/01014 : Silicon [Si]
• CPC Class Codes: H01L 2924/01015 : Phosphorus [P]
• CPC Class Codes: H01L 2924/01019 : Potassium [K]
• CPC Class Codes: H01L 2924/01023 : Vanadium [V]
• CPC Class Codes: H01L 2924/01027 : Cobalt [Co]
• CPC Class Codes: H01L 2924/01028 : Nickel [Ni]
• CPC Class Codes: H01L 2924/01029 : Copper [Cu]
• CPC Class Codes: H01L 2924/01031 : Gallium [Ga]
• CPC Class Codes: H01L 2924/01033 : Arsenic [As]
• CPC Class Codes: H01L 2924/01042 : Molybdenum [Mo]
• CPC Class Codes: H01L 2924/0105 : Tin [Sn]
• CPC Class Codes: H01L 2924/01052 : Tellurium [Te]
• CPC Class Codes: H01L 2924/01074 : Tungsten [W]
• CPC Class Codes: H01L 2924/01078 : Platinum [Pt]
• CPC Class Codes: H01L 2924/01082 : Lead [Pb]
• CPC Class Codes: H01L 2924/01088 : Radium [Ra]
• CPC Class Codes: H01L 2924/014 : Solder alloys
• CPC Class Codes: H01L 2924/1305 : Bipolar Junction Transistor [BJT]
• CPC Class Codes: H01L 2924/13055 : Insulated gate bipolar transistor [IGBT]
• CPC Class Codes: H01L 2924/1306 : Field-effect transistor [FET]
• CPC Class Codes: H01L 2924/13091 : Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
• CPC Class Codes: H01L 2924/15787 : Ceramics, e.g. crystalline carbides, nitrides or oxides
• CPC Class Codes: H01L 2924/181 : Encapsulation
• CPC Class Codes: H01L 2924/19041 : being a capacitor
• CPC Class Codes: H01L 2924/207 : Diameter ranges
• CPC Class Codes: H01L 2924/30105 : Capacitance
• CPC Class Codes: H01L 2924/30107 : Inductance
• CPC Class Codes: H01L 2924/3011 : Impedance
• CPC Class Codes: H01L 2924/3025 : Electromagnetic shielding
• CPC Class Codes: H01L 2924/351 : Thermal stress
• CPC Class Codes: H02M 7/003 : Constructional details, e.g. physical layout, assembly, wiring or busbar connections
• CPC Class Codes: H05K 7/20927 : Liquid coolant without phase change
• CPC Class Codes: Y02T 10/62 : Hybrid vehicles
• CPC Class Codes: Y02T 10/64 : Electric machine technologies in electromobility

Abstract

The present invention provides a vehicle power module and a power converter including a power semiconductor element (328), a plurality of connecting conductors (371U, 372U, 373U) for transmitting current to the power semiconductor element (328), and a metallic base (304) upon which the power semiconductor element (328) and the plurality of connecting conductors (371U, 372U, and 373U) are mounted; and the power semiconductor element (328) and the plurality of connecting conductors (371U, 372U, and 373U) are mounted upon the metallic base (304) so as to form a looped current path. Desirably, the power semiconductor element (328) and the plurality of connecting conductors (371U, 372U, 373U) are arranged so as to form two or more looped current paths.

Claims

1. A semiconductor device that uses at least a single power semiconductor element that, by switching, can either short circuit together or disconnect the electrical potentials at the two ends of the power semiconductor element, and comprising:

a power semiconductor element of a thin plate shape equipped with electrodes on both sides;

an insulating board upon one surface of which at least a first wiring pattern, a second wiring pattern, and a third wiring pattern are formed; and

a metallic base that is adhered to the surface of the insulating board opposite to its surface upon which the wiring patterns are disposed;

and wherein;

an electrode of one side of the power semiconductor element is electrically connected upon the first wiring pattern of the insulating board, and an electrode of other side of the power semiconductor element is connected to a second wiring pattern and a third wiring pattern;

the first wiring pattern is approximately shaped as a letter-T, and the second and third wiring patterns are disposed on both sides of a vertical bar of the approximate letter-T shape of the first wiring pattern;

a first current path of the first wiring pattern, the power semiconductor element, and the second wiring pattern, and a second current path of the first wiring pattern, the power semiconductor element, and the third wiring pattern, constitute two current paths that turn around in letter-U shapes; and

two eddy currents that are induced in the metallic base due to current flowing when the power semiconductor element is switched are created so as to eddy in mutually opposite directions.

2. The semiconductor device according to claim 1, further comprising a first circuit and a second circuit that comprise insulating boards bearing the wiring patterns;

and wherein the first circuit and the second circuit constitute a series circuit, and an electrical potential at both ends of the series circuit is outputted from a connection point between the first circuit and the second circuit due to switching of the power semiconductor element.