Low-crystallization temperature MTJ for spin-transfer torque magnetic random access memory (STTMRAM)
First Claim
1. A spin-torque transfer memory random access memory (STTMRAM) element, employed in a STTMRAM array, where the STTMRAM element received electric current for storage of digital information, the STTMRAM element comprising:
- a magnetic tunnel junction (MTJ) including,an anti-ferromagnetic (AF) layer;
a fixed layer having a magnetization that is substantially fixed in one direction and that comprises a first magnetic layer, an AF coupling layer and a second magnetic layer;
a barrier layer formed upon the fixed layer;
a free layer comprised of a low-crystallization temperature magnetization layer made of an alloy of CoFeB—
Z where Z is made of one or more of titanium, (Ti), yittrium (Y), zirconium (Zr), and vanadium (V), the free layer having a magnetization that is switchable;
wherein during a write operation, a bidirectional electric current is applied across the STTMRAM element to switch the magnetization of the free layer between parallel and anti-parallel states relative to the magnetization of the fixed layer.
6 Assignments
0 Petitions
Accused Products
Abstract
A spin-torque transfer memory random access memory (STTMRAM) element is disclosed and has a fixed layer, a barrier layer formed upon the fixed layer, and a free layer comprised of a low-crystallization temperature alloy of CoFeB—Z where Z is below 25 atomic percent of one or more of titanium, (Ti), yittrium (Y), zirconium (Zr), and vanadium (V), wherein during a write operation, a bidirectional electric current is applied across the STTMRAM element to switch the magnetization of the free layer between parallel and anti-parallel states relative to the magnetization of the fixed layer.
-
Citations
19 Claims
-
1. A spin-torque transfer memory random access memory (STTMRAM) element, employed in a STTMRAM array, where the STTMRAM element received electric current for storage of digital information, the STTMRAM element comprising:
-
a magnetic tunnel junction (MTJ) including, an anti-ferromagnetic (AF) layer; a fixed layer having a magnetization that is substantially fixed in one direction and that comprises a first magnetic layer, an AF coupling layer and a second magnetic layer; a barrier layer formed upon the fixed layer; a free layer comprised of a low-crystallization temperature magnetization layer made of an alloy of CoFeB—
Z where Z is made of one or more of titanium, (Ti), yittrium (Y), zirconium (Zr), and vanadium (V), the free layer having a magnetization that is switchable;wherein during a write operation, a bidirectional electric current is applied across the STTMRAM element to switch the magnetization of the free layer between parallel and anti-parallel states relative to the magnetization of the fixed layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14)
-
-
15. A system including a spin-torque transfer memory random access memory (STTMRAM) element, the STTMRAM element employed in a STTMRAM array, where the STTMRAM element received electric current for storage of digital information, the STTMRAM element comprising:
-
a magnetic tunnel junction (MTJ) including, an anti-ferromagnetic (AF) layer; a fixed layer having a magnetization that is substantially fixed in one direction and that comprises a first magnetic layer, an AF coupling layer and a second magnetic layer; a barrier layer formed upon the fixed layer; a free layer comprised of a low-crystallization temperature magnetization layer made of an alloy of CoFeB—
Z where Z is made of one or more of titanium, (Ti), yittrium (Y), zirconium (Zr), and vanadium (V), the free layer having a magnetization that is switchable;wherein during a write operation, a bidirectional electric current is applied across the STTMRAM element to switch the magnetization of the free layer between parallel and anti-parallel states relative to the magnetization of the fixed layer. - View Dependent Claims (16, 17, 18, 19)
-
Specification