Memory device and semiconductor device
First Claim
1. A semiconductor device comprising:
- a first memory portion including a nonvolatile first memory element being capable of storing first data by writing of reference data;
a second memory portion including a first transistor and a second memory element being capable of storing second data by writing of the reference data; and
a comparison circuit configured to compare the first data with the second data,wherein the first transistor includes an oxide semiconductor in a channel formation region, andwherein one of a source and a drain of the first transistor is electrically connected to the second memory element.
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Accused Products
Abstract
One of objects is to provide a nonvolatile memory device in which the occurrence of a defect in data writing is suppressed and whose area can be suppressed, or a semiconductor device including the nonvolatile memory device. A first memory portion including a nonvolatile memory element and a second memory portion (data buffer) for temporarily storing data in verifying operation in which whether the data is correctly written into the first memory portion is verified are provided. Further, the second memory portion includes a memory element and an insulated gate field effect transistor for controlling the holding of charge in the memory element; the off-state current or the leakage current of the transistor is extremely low.
146 Citations
27 Claims
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1. A semiconductor device comprising:
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a first memory portion including a nonvolatile first memory element being capable of storing first data by writing of reference data; a second memory portion including a first transistor and a second memory element being capable of storing second data by writing of the reference data; and a comparison circuit configured to compare the first data with the second data, wherein the first transistor includes an oxide semiconductor in a channel formation region, and wherein one of a source and a drain of the first transistor is electrically connected to the second memory element. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A semiconductor device comprising:
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a first memory portion including a nonvolatile first memory element being capable of storing first data by writing of reference data; a second memory portion including a first transistor and a second memory element being capable of storing second data by writing of the reference data; and a comparison circuit configured to compare the first data with the second data, wherein the first transistor includes an oxide semiconductor in a channel formation region, wherein one of a source and a drain of the first transistor is electrically connected to the second memory element, and wherein the second memory element includes a capacitor. - View Dependent Claims (11, 12, 13, 14, 15, 16, 17, 18)
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19. A semiconductor device comprising:
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a first memory portion including a nonvolatile first memory element being capable of storing first data by writing of reference data; a second memory portion including a first transistor and a second memory element being capable of storing second data by writing of the reference data; and a comparison circuit configured to compare the first data with the second data, wherein the first transistor includes an oxide semiconductor in a channel formation region, and wherein charge which is accumulated in the second memory element by writing of the reference data is held by the first transistor. - View Dependent Claims (20, 21, 22, 23, 24, 25, 26, 27)
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Specification