Optical device structure using miscut GaN substrates for laser applications
First Claim
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1. A semiconductor laser comprising:
- a gallium nitride substrate having a semipolar crystalline surface region characterized by and an orientation of greater than about 2 degrees from an (11-22) plane toward a (0001) plane, but less than about 50 degrees, and having an m-direction, and a c-projection direction perpendicular to the m-direction;
a laser region formed over the semipolar crystalline surface region, the laser region having a cavity orientation substantially parallel to the m-direction and extending from a first end to a second end, and having an indium concentration sufficient to cause emission of polarized light of about at least 490 nm wavelength;
a first cleaved m-face facet on the first end; and
a second cleaved m-face facet on the second end;
wherein the laser region emits light polarized substantially parallel to the c-projection direction.
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Abstract
An optical device capable of emitting light having a wavelength ranging from about 490 to about 580 nanometers has a gallium nitride substrate with a semipolar crystalline surface region characterized by an orientation of greater than 3 degrees from (11-22) towards (0001) but less than about 50 degrees. A laser stripe formed on the substrate has a cavity orientation substantially parallel to the m-direction.
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Citations
18 Claims
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1. A semiconductor laser comprising:
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a gallium nitride substrate having a semipolar crystalline surface region characterized by and an orientation of greater than about 2 degrees from an (11-22) plane toward a (0001) plane, but less than about 50 degrees, and having an m-direction, and a c-projection direction perpendicular to the m-direction; a laser region formed over the semipolar crystalline surface region, the laser region having a cavity orientation substantially parallel to the m-direction and extending from a first end to a second end, and having an indium concentration sufficient to cause emission of polarized light of about at least 490 nm wavelength; a first cleaved m-face facet on the first end; and a second cleaved m-face facet on the second end; wherein the laser region emits light polarized substantially parallel to the c-projection direction. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17)
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18. A semiconductor laser comprising:
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a gallium nitride substrate having a semipolar crystalline surface region characterized by an orientation of approximately (11-23) and having an m-direction, and a c-projection direction perpendicular to the m-direction; a laser region formed over the semipolar crystalline surface region, the laser region having a cavity orientation substantially parallel to the m-direction and extending from a first end to a second end, and having an indium concentration sufficient to cause emission of polarized light of about at least 490 nm wavelength; a first cleaved m-face facet on the first end; and a second cleaved m-face facet on the second end; wherein the laser region emits light polarized substantially parallel to the c-projection direction.
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Specification