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System and method of adjusting a resistance-based memory circuit parameter

  • US 8,423,329 B2
  • Filed: 01/21/2010
  • Issued: 04/16/2013
  • Est. Priority Date: 01/21/2010
  • Status: Active Grant
First Claim
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1. A method of determining a set of circuit parameters, the method comprising:

  • determining a range of sizes for a clamp transistor and selecting a set of clamp transistors each having a size within the determined range of sizes;

    for each clamp transistor in the set of clamp transistors;

    executing a first simulation to generate a first contour graph representing current data over a range of statistical values, the first contour graph identifying a read disturbance area and a design range of a gate voltage of the clamp transistor and a load of the clamp transistor;

    executing a second simulation to generate a second contour graph representing a sense margin over a range of statistical values of the gate voltage of the clamp transistor and the load of the clamp transistor;

    selecting a first sense margin based on the second contour graph and that satisfies the design range of the first contour graph; and

    determining a second sense margin corresponding to a selected clamp transistor in the set of clamp transistors and selecting a corresponding gate voltage and a corresponding load of the selected clamp transistor based on the second sense margin.

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