Amorphous oxide semiconductor and thin film transistor using the same

• US 8,426,243 B2
• Filed: 01/18/2012
• Issued: 04/23/2013
• Est. Priority Date: 08/28/2008
• Status: Expired due to Fees

• Current Assignee: Canon Kabushiki Kaisha (Canon Inc.)
• Original Assignee: Canon Kabushiki Kaisha (Canon Inc.)
• Inventors: Hayashi, Ryo, Omura, Hideyuki, Kumomi, Hideya, Shigesato, Yuzo
• Primary Examiner(s): STARK, JARRETT J
• Application Number:
  US13/353,077
• Publication Number:
  US 20120115276A1
• Time in Patent Office: 461 Days
• Field of Search: 438/104, 257/43, 257/E29.297, 257/E21.462, 257/E21.324
• US Class Current: 438/104
• CPC Class Codes: H01L 29/78663 Amorphous silicon transistors
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate

Abstract

There is provided an amorphous oxide semiconductor including hydrogen and at least one element of indium (In) and zinc (Zn), the amorphous oxide semiconductor containing one of hydrogen atoms and deuterium atoms of 1×10²⁰ cm⁻³ or more to 1×10²² cm⁻³ or less, and a density of bonds between oxygen and hydrogen except bonds between excess oxygen (O_EX) and hydrogen in the amorphous oxide semiconductor being 1×10¹⁸ cm⁻³ or less.

Claims

1. A method of manufacturing a thin film transistor comprising a substrate, a channel layer, a gate insulating layer, a source electrode, a drain electrode, and a gate electrode, the channel layer comprising an amorphous oxide semiconductor containing hydrogen and at least one element of indium (In) and zinc (Zn), the method comprising:

forming the channel layer by sputtering using a film forming gas containing water vapor; and

carrying out thermal treatment at 150°

C. or higher to 500°

C. or lower after the channel layer is formed.

2. The method of manufacturing a thin film transistor according to claim 1, wherein a partial pressure of the introduced water vapor in the film forming gas is 8×

10<sup>−

4</sup> Pa or higher.

3. A method of manufacturing a thin film transistor comprising a substrate, a channel layer, a gate insulating layer, a source electrode, a drain electrode, and a gate electrode, the channel layer comprising an amorphous oxide semiconductor containing hydrogen and at least one element of indium (In) and zinc (Zn), the method comprising:

forming the channel layer by applying a solution; and

carrying out thermal treatment at 500°

C. or lower after the channel layer is formed.

4. A method of manufacturing a thin film transistor comprising a substrate, a channel layer, a gate insulating layer, a source electrode, a drain electrode, and a gate electrode, the channel layer comprising an amorphous oxide semiconductor containing hydrogen and at least one element of indium (In) and zinc (Zn), the method comprising:

forming the channel layer by electrodeposition; and

carrying out thermal treatment at 500°

C. or lower after the channel layer is formed.