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Semiconductor device and method for manufacturing the same

  • US 8,426,868 B2
  • Filed: 10/23/2009
  • Issued: 04/23/2013
  • Est. Priority Date: 10/31/2008
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • a gate electrode layer;

    a gate insulating layer over the gate electrode layer;

    a first oxide semiconductor layer over the gate insulating layer;

    a second oxide semiconductor layer over the first oxide semiconductor layer; and

    a pair of buffer regions having n-type conductivity over the second oxide semiconductor layer;

    a source electrode layer over one of the pair of buffer regions and a drain electrode layer over the other of the pair of buffer regions,wherein each of the second oxide semiconductor layer and the pair of buffer regions contains indium, gallium, and zinc,wherein a thickness of the first oxide semiconductor layer is smaller than a thickness of the second oxide semiconductor layer, andwherein an electrical conductivity of the first oxide semiconductor layer is higher than an electrical conductivity of the second oxide semiconductor layer.

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