Light emitting diodes including two reflector layers
First Claim
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1. A light emitting diode comprising:
- a diode region comprising a gallium nitride based n-type layer, an active region on the gallium nitride based n-type layer and a gallium nitride based p-type layer on the active region opposite the gallium nitride based n-type layer;
a first reflector layer that comprises silver on the gallium nitride based p-type layer opposite the active region and oriented to reflect light that emerges from the diode region and impinges on the first reflector layer that comprises silver back towards the diode region; and
a second reflector layer that comprises aluminum on the gallium nitride based n-type layer opposite the active region and oriented to reflect light that emerges from the diode region and impinges on the second reflector layer that comprises aluminum back towards the diode region.
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Abstract
A light emitting diode includes a diode region having a gallium nitride based n-type layer, an active region and a gallium nitride based p-type layer. A first reflector layer is provided on the gallium nitride based p-type layer, and a second reflector layer is provided on the gallium nitride based n-type layer. Bonding layers, a mounting support, a wire bond and/or transparent oxide layers also may be provided.
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Citations
19 Claims
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1. A light emitting diode comprising:
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a diode region comprising a gallium nitride based n-type layer, an active region on the gallium nitride based n-type layer and a gallium nitride based p-type layer on the active region opposite the gallium nitride based n-type layer; a first reflector layer that comprises silver on the gallium nitride based p-type layer opposite the active region and oriented to reflect light that emerges from the diode region and impinges on the first reflector layer that comprises silver back towards the diode region; and a second reflector layer that comprises aluminum on the gallium nitride based n-type layer opposite the active region and oriented to reflect light that emerges from the diode region and impinges on the second reflector layer that comprises aluminum back towards the diode region. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15)
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16. A light emitting diode comprising:
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a vertical gallium nitride based light emitting diode structure; and a pair of reflector layers, a respective one of which is on an opposite side of the vertical gallium nitride based light emitting diode structure, and is oriented to reflect light that emerges from the vertical gallium nitride based light emitting diode structure and impinges on a respective one of the pair of reflective layers back towards the vertical gallium nitride based light emitting diode structure, wherein one of the reflector layers comprises silver and the other of the reflector layers comprises aluminum. - View Dependent Claims (17, 18, 19)
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Specification