Three-dimensional integrated circuits and techniques for fabrication thereof
First Claim
1. A three-dimensional integrated circuit comprising:
- a bottom device layer having a substrate, a digital complementary metal-oxide semiconductor (CMOS) circuitry layer adjacent to the substrate and a first bonding oxide layer adjacent to a side of the digital CMOS circuitry layer opposite the substrate; and
a top device layer having an analog CMOS and photonics circuitry layer formed in a silicon-on-insulator (SOI) layer having a buried oxide (BOX) with a thickness of greater than or equal to about 0.5 micrometers and a second bonding oxide layer adjacent to the analog CMOS and photonics circuitry layer,wherein the bottom device layer is bonded to the top device layer by an oxide-to-oxide bond between the first bonding oxide layer and the second bonding oxide layer.
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Accused Products
Abstract
Integrated circuits having complementary metal-oxide semiconductor (CMOS) and photonics circuitry and techniques for three-dimensional integration thereof are provided. In one aspect, a three-dimensional integrated circuit comprises a bottom device layer and a top device layer. The bottom device layer comprises a substrate; a digital CMOS circuitry layer adjacent to the substrate; and a first bonding oxide layer adjacent to a side of the digital CMOS circuitry layer opposite the substrate. The top device layer comprises an analog CMOS and photonics circuitry layer formed in a silicon-on-insulator (SOI) layer having a buried oxide (BOX) with a thickness of greater than or equal to about 0.5 micrometers; and a second bonding oxide layer adjacent to the analog CMOS and photonics circuitry layer. The bottom device layer is bonded to the top device layer by an oxide-to-oxide bond between the first bonding oxide layer and the second bonding oxide layer.
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Citations
13 Claims
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1. A three-dimensional integrated circuit comprising:
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a bottom device layer having a substrate, a digital complementary metal-oxide semiconductor (CMOS) circuitry layer adjacent to the substrate and a first bonding oxide layer adjacent to a side of the digital CMOS circuitry layer opposite the substrate; and a top device layer having an analog CMOS and photonics circuitry layer formed in a silicon-on-insulator (SOI) layer having a buried oxide (BOX) with a thickness of greater than or equal to about 0.5 micrometers and a second bonding oxide layer adjacent to the analog CMOS and photonics circuitry layer, wherein the bottom device layer is bonded to the top device layer by an oxide-to-oxide bond between the first bonding oxide layer and the second bonding oxide layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A three-dimensional integrated circuit comprising:
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a bottom device layer having a substrate, a digital CMOS circuitry layer adjacent to the substrate and a first bonding oxide layer adjacent to a side of the digital CMOS circuitry layer opposite the substrate; and a top device layer having an analog CMOS and photonics circuitry layer formed in a SOI layer having a BOX with a thickness of greater than or equal to about 0.5 micrometers, at least one semiconductor optical amplifier bonded to the analog CMOS and photonics circuitry layer by an oxide-to-oxide bond and a second bonding oxide layer adjacent to the analog CMOS and photonics circuitry layer, wherein the bottom device layer is bonded to the top device layer by an oxide-to-oxide bond between the first bonding oxide layer and the second bonding oxide layer. - View Dependent Claims (12, 13)
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Specification