Edge connect wafer level stacking

• US 8,426,957 B2
• Filed: 04/14/2011
• Issued: 04/23/2013
• Est. Priority Date: 10/10/2006
• Status: Active Grant

• Current Assignee: Tessera, Inc. (Adeia Inc.)
• Original Assignee: Tessera, Inc. (Adeia Inc.)
• Inventors: Haba, Belgacem, Oganesian, Vage
• Primary Examiner(s): Wagner, Jenny L
• Application Number:
  US13/086,645
• Publication Number:
  US 20110187007A1
• Time in Patent Office: 740 Days
• Field of Search: 257/686, 257/784
• US Class Current: 257/686
• CPC Class Codes: H01L 21/78 with subsequent division of the substrate into plural individual devices cutting to change the surface-physical characteristics or shape of semiconductor bodies H01L21/304
• CPC Class Codes: H01L 2224/24145 the bodies being stacked
• CPC Class Codes: H01L 2224/45015 being circular
• CPC Class Codes: H01L 2224/45099 Material
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48145 the bodies being stacked
• CPC Class Codes: H01L 2225/06506 Wire or wire-like electrical connections between devices
• CPC Class Codes: H01L 2225/0651 Wire or wire-like electrical connections from device to substrate
• CPC Class Codes: H01L 2225/06517 Bump or bump-like direct electrical connections from device to substrate
• CPC Class Codes: H01L 2225/06524 Electrical connections formed on device or on substrate, e.g. a deposited or grown layer
• CPC Class Codes: H01L 2225/06541 Conductive via connections through the device, e.g. vertical interconnects, through silicon via [TSV]
• CPC Class Codes: H01L 2225/06551 Conductive connections on the side of the device
• CPC Class Codes: H01L 2225/06568 the devices decreasing in size, e.g. pyramidical stack
• CPC Class Codes: H01L 2225/06582 Housing for the assembly, e.g. chip scale package [CSP]
• CPC Class Codes: H01L 23/5382 Adaptable interconnections, e.g. for engineering changes
• CPC Class Codes: H01L 24/48 of an individual wire connector
• CPC Class Codes: H01L 25/0657 Stacked arrangements of devices
• CPC Class Codes: H01L 25/50 Multistep manufacturing processes of assemblies consisting of devices, each device being of a type provided for in group H01L27/00 or H01L29/00 H01L21/50 takes precedence
• CPC Class Codes: H01L 2924/00012 Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01004 : Beryllium [Be]
• CPC Class Codes: H01L 2924/01057 : Lanthanum [La]
• CPC Class Codes: H01L 2924/01078 : Platinum [Pt]
• CPC Class Codes: H01L 2924/01079 : Gold [Au]
• CPC Class Codes: H01L 2924/14 : Integrated circuits
• CPC Class Codes: H01L 2924/15311 : being a ball array, e.g. BGA
• CPC Class Codes: H01L 2924/207 : Diameter ranges

Abstract

A stacked microelectronic assembly includes a first stacked subassembly and a second stacked subassembly overlying a portion of the first stacked subassembly. Each stacked subassembly includes at least a respective first microelectronic element having a face and a respective second microelectronic element having a face overlying and parallel to a face of the first microelectronic element. Each of the first and second microelectronic elements has edges extending away from the respective face. A plurality of traces at the respective face extend about at least one respective edge. Each of the first and second stacked subassemblies includes contacts connected to at least some of the plurality of traces. Bond wires conductively connect the contacts of the first stacked subassembly with the contacts of the second stacked subassembly.

Claims

1. A stacked microelectronic assembly, comprising:

a first stacked subassembly and a second stacked subassembly overlying a portion of the first stacked subassembly, each stacked subassembly including at least a respective first microelectronic element having a face and a respective second microelectronic element having a face overlying and parallel to a face of the first microelectronic element, each of the first and second microelectronic elements having edges extending away from the respective faces, each of the first and second stacked subassemblies having a land exposed at a face of the subassembly and a lead, the lead coupled to the land and extending along the face of the subassembly and from the face of the subassembly continuously about the edges of the first and second microelectronic elements thereof; and

a bond wire conductively connecting the land of the first stacked subassembly with the land of the second stacked subassembly.

2. A stacked microelectronic assembly as claimed in claim 1, wherein each of the first and second stacked subassemblies has an edge extending away from the face thereof, wherein the face of the first stacked subassembly extends beyond the face of the second stacked subassembly such that the land at the face of the first stacked subassembly is exposed beyond the face of the second stacked subassembly.

3. A stacked microelectronic assembly as claimed in claim 1, wherein a circuit panel having terminals is conductively connected by the bond wire to the land of at least one of the first stacked subassembly or the second stacked subassembly.

4. A stacked microelectronic assembly as claimed in claim 1, wherein each of the first and second subassemblies has inclined walls.

5. A stacked microelectronic assembly as claimed in claim 1, further comprising:

a third stacked subassembly overlying a portion of the second stacked subassembly, and including at least a respective first microelectronic element having a face and a respective second microelectronic element having a face overlying and parallel to a face of the first microelectronic element, and edges extending away from the respective faces of the first and second microelectronic elements of the third stacked subassembly,

the third stacked assembly having a land exposed at a face thereof and a lead formed by plating, the lead of the third stacked assembly coupled to the land of the third stacked assembly and extending along the face of the third stacked assembly and from the face of the third stacked subassembly continuously about the edges of the first and second microelectronic elements of the third stacked assembly,

a further bond wire conductively connecting the land of the third stacked subassembly with the land of at least one of the first stacked subassembly or the second stacked subassembly.

6. A stacked microelectronic assembly as claimed in claim 5, wherein each of the second and third stacked subassemblies has an edge extending away from the face thereof, wherein the face of the second stacked subassembly extends beyond the face of the third stacked subassembly such that the land at the face of the second stacked subassembly is exposed beyond the face of the third stacked subassembly.

12. A stacked microelectronic assembly as claimed in claim 1, wherein the lead is formed by plating.

7. A stacked microelectronic assembly, comprising:

a plurality of stacked subassemblies each one, except for a bottommost one, overlying a portion of another of the plurality of stacked subassemblies, each stacked subassembly including at least a respective first microelectronic element having a face and a respective second microelectronic element having a face overlying and parallel to a face of the first microelectronic element, each of the first and second microelectronic elements having edges extending away from the respective face, each of the plurality of stacked subassemblies having a land exposed at a face of the subassembly and a lead, the lead coupled to the land and extending along the face of the subassembly and from the face of the subassembly continuously about the edges of the first and second microelectronic elements thereof; and

a bond wire conductively connecting the land of a given one of the plurality of stacked subassemblies with the land of at least another of the plurality of stacked subassemblies.

8. A stacked microelectronic assembly as claimed in claim 7, wherein each of the plurality of stacked subassemblies has an edge extending away from the face thereof, wherein the face of the given one of the plurality of stacked subassemblies extends beyond the face of its immediately overlying stacked subassembly such that the land at the face of the given stacked subassembly is exposed beyond the face of the immediately overlying stacked subassembly.

9. A stacked microelectronic assembly as claimed in claim 7, wherein the bond wire conductively connects the land of the given one of the plurality of stacked subassemblies with the land of its immediately overlying stacked subassembly.

10. A stacked microelectronic assembly as claimed in claim 7, wherein the bond wire conductively connects the land of a given one of the plurality of stacked subassemblies with the land of its immediately underlying stacked subassembly.

11. A stacked microelectronic assembly as claimed in claim 7, wherein the bond wire conductively connects the land of the given one of the plurality of stacked subassemblies with the land of another one of the plurality of stacked subassemblies other than its immediately overlying and immediately underlying subassemblies.

13. A stacked microelectronic assembly as claimed in claim 7, wherein the lead is formed by plating.