Light emitting device, and lighting system, image display using the same

• US 8,427,044 B2
• Filed: 03/28/2011
• Issued: 04/23/2013
• Est. Priority Date: 06/30/2004
• Status: Active Grant

• Current Assignee: Mitsubishi Chemical Corporation (Mitsubishi Chemical Group Corp.)
• Original Assignee: Mitsubishi Chemical Corporation (Mitsubishi Chemical Group Corp.)
• Inventors: Shimomura, Yasuo, Kaneda, Hideaki, Kijima, Naoto
• Primary Examiner(s): Patel, Nimeshkumar
• Assistant Examiner(s): HORIKOSHI, STEVEN Y
• Application Number:
  US13/073,231
• Publication Number:
  US 20110181175A1
• Time in Patent Office: 757 Days
• Field of Search: 252/301.4 F, 313/503
• US Class Current: 313/503
• CPC Class Codes: C09K 11/0883 Arsenides; Nitrides; Phosphides
• CPC Class Codes: C09K 11/64 containing aluminium
• CPC Class Codes: C09K 11/77348 Silicon Aluminium Nitrides or Silicon Aluminium Oxynitrides
• CPC Class Codes: C09K 11/77742 Silicates
• CPC Class Codes: H01L 2224/45144 Gold (Au) as principal constituent
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48247 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 33/504 Elements with two or more wavelength conversion materials
• CPC Class Codes: H05B 33/12 Light sources with substantially two-dimensional radiating surfaces

Abstract

To enhance luminance and color rendering of a light emitting device comprising phosphors as wavelength converting material and

at least one semiconductor light emitting device that emits visible light, as said phosphors, are used phosphors which are one or more kinds of phosphors selected from a group consisting of oxides, oxynitrides and nitrides, and are a mixture consisting of two or more kinds of phosphors whose luminous efficiency is 35% or higher when excited by the visible light from said semiconductor light emitting device at room temperature. In addition, said mixture contains a first phosphor, and a second phosphor that is different from said first phosphor and capable of absorbing emitted light from said first phosphor, and said first phosphor is contained 85 weight % or more of said mixture of phosphors.

Claims

1. A light emitting device, comprising:

a mixture of a first phosphor, and a second phosphor that is different from the first phosphor; and

at least one semiconductor light emitting device that emits visible light;

wherein;

each of the first phosphor and the second phosphor is independently selected from the group consisting of oxides, oxynitrides and nitrides;

each of the first phosphor and the second phosphor has a luminous efficiency of 35% or higher when excited by the visible light from the semiconductor light emitting device at room temperature;

the second phosphor is capable of absorbing emitted light from the first phosphor;

the first phosphor is present in the mixture of phosphors in an amount of at least 85 weight %;

the second phosphor has the following formula (3);

M_aA_bD_cE_dX_e 

 

(3)

wherein;

M is Eu and optionally at least one element selected from the group consisting of Mn, Ce, Pr, Nd, Sm, Tb, Dy, Ho, Er, Tm, and Yb;

A is selected from the group consisting of bivalent metal elements other than M;

D is at least one element selected from the group consisting of tetravalent metal elements;

E is at least one element selected from the group consisting of trivalent metal elements;

X is at least one element selected from the group consisting of O, N, and F; and

a, b, c, d, and e satisfy the following conditions;

a+b=1;

0.00001≦

a≦

0.1;

0.5≦

c≦

1.8;

0. 5≦

d≦

1.8;

0.8×

(2/3+4/3×

c+d)≦

e; and

e≦

1.2×

(2/3+4/3×

c+d).

2. The light emitting device as defined in claim 1, wherein:

an emission peak wavelength L1 of the first phosphor is in a range of 490 nm≦

_L1_≦

_550 nm; and

an emission peak wavelength L2 of the second phosphor is in a range of 600 nm_≦

_L2_≦

_700 nm.

3. The light emitting device as defined in claim 1, wherein a color coordinate (x, y) of light emitted by the mixture of phosphors is within a range defined by a quadrangle with apexes having CIE color coordinates (0.450, 0.350), (0.550, 0.450), (0.400, 0.600), and (0.300, 0.500), when the mixture of phosphors is irradiated by the emitted light from the semiconductor light emitting device.

4. The light emitting device as defined in claim 1, wherein a color coordinate of a composite of light emitted by the semiconductor light emitting device and light emitted by the mixture of phosphors when excited by the emitted light from the semiconductor light emitting device, is in a range defined by a quadrangle with apexes having CIE color coordinates (0.275, 0.175), (0.450, 0.400), (0.350, 0.450), and (0.175, 0.250).

5. A lighting system, comprising the light emitting device as defined in claim 1.

6. A display, comprising the light emitting device as defined in claim 1.

7. A light emitting device as defined in claim 1, wherein A is at least one element selected from the group consisting of Mg, Ca, Sr and Ba.

8. A light emitting device as defined in claim 1, wherein:

A is at least one element selected from the group consisting of Mg, Ca, Sr and Ba;

D is at least one element selected from the group consisting of Si, Ge, Sn, Ti, Zr and Hf; and

E is at least one element selected from the group consisting of B, Al, Ga, In, Sc, Y, La, Gd and Lu.

9. A light emitting device as defined in claim 1, wherein

M comprises Eu;

A comprises Ca;

D comprises Si;

E comprises Al; and

X comprises N.

10. A light emitting device as defined in claim 1, wherein

M is Eu;

A is Ca;

D is Si;

E is Al; and

X is N or a mixture of N and O.

11. A phosphor mixture, comprising:

CaAlSiN₃;

Eu; and

Ca₃Sc₂Si₃O₁₂;

Ce;

wherein;

the mixture comprises Ca₃Sc₂Si₃O₁₂;

Ce in an amount of 94 wt % based on a total weight of the phosphor mixture; and

the mixture comprises CaAlSiN₃;

Eu in an amount of 6 wt % based on a total weight of the phosphor mixture.

12. Lighting equipment, comprising:

the phosphor mixture according to claim 11; and

an LED.

13. A phosphor mixture, comprising:

a first phosphor having a composition given by the formula M_aA_bD_cE_dX_e, wherein;

M comprises at least one element selected from the group consisting of Mn, Ce, Pr, Nd, Sm, Eu, Tb, Dy, Ho, Er, Tm, and Yb;

A comprises at least one element selected from the group consisting of divalent metal elements other than M;

D comprises at least one element selected from the group consisting of tetravalent metal elements;

E comprises at least one element selected from the group consisting of trivalent metal elements; and

X comprises at least one of O and N;

wherein;

a+b=1;

c=d=1;

0.8×

(2/3+4/3×

c+d) ≦

e; and

e≦

1.2×

(2/3+4/3×

c+d); and

a second phosphor having an emission peak at a wavelength of from 490 nm to 550 nm when irradiated with excitation light having a wavelength of from 420 to 500 nm.

14. The phosphor mixture according to claim 13, wherein:

A comprises at least one member selected from the group consisting of Mg, Ca, Sr and Ba;

E comprises at least one element selected from the group consisting of Al and Ga; and

D comprises at least one element selected from the group consisting of Si and Ge.

15. The phosphor mixture according to claim 13, wherein M comprises Eu.

16. The phosphor mixture according to claim 13, wherein the first phosphor comprises CaAlSiN₃:

Eu.

17. The phosphor mixture according to claim 13, wherein the second phosphor comprises Ca₃Sc₂Si₃O₁₂:

Ce.

18. The phosphor mixture according to claim 13, wherein:

the first phosphor comprises CaAlSiN₃;

Eu; and

the second phosphor comprises Ca₃Sc₂Si₃O₁₂;

Ce.

19. The phosphor mixture according to claim 13, wherein the second phosphor comprises a phosphor having a garnet crystal structure with Ce as an activator.

20. The phosphor mixture according to claim 19, wherein the second phosphor comprises an Al garnet phosphor containing Y and/or Tb.

21. The phosphor mixture according to claim 19, wherein the second phosphor comprises an Si garnet phosphor containing Sc.

22. The phosphor mixture according to claim 19, wherein a chromaticity of an emission spectrum of the mixture satisfies x=0.420, and y=0.500, when excited with an excitation light having a wavelength of 460 nm.

23. The phosphor mixture according to claim 19, wherein a chromaticity of an emission spectrum of the mixture satisfies x=0.420, and y=0.495, when excited with an excitation light having a wavelength of 460 nm.

24. A light emitting device, comprising:

the phosphor mixture according to claim 13; and

a light emitting part emitting light that emits light in a wavelength range of from 380 nm to 480 nm.

25. The light emitting device according to claim 24, wherein the light emitting part comprises an LED.

26. The light emitting device according to claim 25, wherein the LED comprises Ga.

27. The light emitting device according to claim 24, wherein a general color rendering index Ra of the light emitting device is at least 80.

28. The light emitting device according to claim 24, wherein a correlated color temperature of the light emitting device is 6400K.

29. The light emitting device according to claim 24, wherein a correlated color temperature of the light emitting device is 6800K.