Plasma doping to reduce dielectric loss during removal of dummy layers in a gate structure
First Claim
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1. A method of doping an inter-level dielectric (ILD) layer surrounding a gate structure on a substrate to improve yield of the substrate, comprising:
- removing excess inter-level dielectric of the ILD layer above the gate structure, wherein the gate structure includes a dummy gate electrode layer, and wherein the removal of the excess ILD exposes the dummy gate electrode layer;
doping a surface layer on the substrate with dopants, wherein the doped surface layer includes a doped ILD surface layer of the ILD layer; and
removing the exposed dummy gate electrode layer, wherein the doped ILD surface layer reduces the loss of the ILD layer during the removal of the exposed dummy gate electrode.
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Abstract
The embodiments of methods and structures disclosed herein provide mechanisms of performing doping an inter-level dielectric film, ILD0, surrounding the gate structures with a dopant to reduce its etch rates during the processes of removing dummy gate electrode layer and/or gate dielectric layer for replacement gate technologies. The ILD0 film may be doped with a plasma doping process (PLAD) or an ion beam process. Post doping anneal is optional.
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20 Claims
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1. A method of doping an inter-level dielectric (ILD) layer surrounding a gate structure on a substrate to improve yield of the substrate, comprising:
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removing excess inter-level dielectric of the ILD layer above the gate structure, wherein the gate structure includes a dummy gate electrode layer, and wherein the removal of the excess ILD exposes the dummy gate electrode layer; doping a surface layer on the substrate with dopants, wherein the doped surface layer includes a doped ILD surface layer of the ILD layer; and removing the exposed dummy gate electrode layer, wherein the doped ILD surface layer reduces the loss of the ILD layer during the removal of the exposed dummy gate electrode. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
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14. A method of doping an inter-level dielectric (ILD) layer surrounding a gate structure on a substrate to improve yield of the substrate, comprising:
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removing excess inter-level dielectric of the ILD layer above the gate structure, wherein the gate structure includes a dummy gate electrode layer and a dummy gate dielectric layer under the dummy gate electrode layer, and wherein the removal of the excess ILD exposes the dummy gate electrode layer; doping a surface layer on the substrate with dopants, wherein the doped surface layer includes a doped ILD surface layer of the ILD layer; and removing the exposed dummy gate electrode layer and the dummy gate dielectric layer underneath, wherein the doped ILD surface layer reduces the loss of the ILD layer during the removal of the exposed dummy gate electrode and the dummy gate dielectric layer.
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15. A method of doping an inter-level dielectric (ILD) layer surrounding a gate structure on a substrate, comprising:
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planarizing the ILD layer to expose a gate structure, wherein the gate structure includes a dummy gate electrode layer and sidewall spacers; doping a surface layer of the substrate, the surface layer comprising the ILD layer, the dummy gate electrode layer and the sidewall spacers; removing the dummy gate electrode layer, wherein the doped ILD surface layer reduces the loss of the ILD layer during the removal of the exposed dummy gate electrode and the dummy gate dielectric layer. - View Dependent Claims (16, 17, 18, 19, 20)
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