Semiconductor chip and method for producing a semiconductor chip
First Claim
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1. A semiconductor chip comprising:
- a semiconductor body, which comprises a semiconductor layer sequence comprising an active region provided for generating radiation,a carrier that has a first carrier area facing the semiconductor body and a second carrier area remote from the semiconductor body, the semiconductor body fixed to the carrier by a connection layer, anda plurality of reflective or scattering elements disposed between the second carrier area and the active region;
wherein the semiconductor chip further comprises at least one of the following;
(i) a contact layer transmissive to radiation generated in the active region, the contact layer disposed between the semiconductor body and the connection layer, wherein a refractive index of the contact layer is matched to a refractive index of the semiconductor body; and
(ii) a refractive index of the connection layer is matched to a refractive index of the semiconductor body.
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Abstract
A semiconductor chip includes a carrier and a semiconductor body, which includes a semiconductor layer sequence having an active region provided for generating radiation. The carrier has a first carrier area facing the semiconductor body and a second carrier area remote from the semiconductor body. The semiconductor body is cohesively fixed to the carrier by means of a connection layer. A plurality of reflective or scattering elements are formed between the second carrier area and the active region.
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Citations
34 Claims
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1. A semiconductor chip comprising:
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a semiconductor body, which comprises a semiconductor layer sequence comprising an active region provided for generating radiation, a carrier that has a first carrier area facing the semiconductor body and a second carrier area remote from the semiconductor body, the semiconductor body fixed to the carrier by a connection layer, and a plurality of reflective or scattering elements disposed between the second carrier area and the active region; wherein the semiconductor chip further comprises at least one of the following; (i) a contact layer transmissive to radiation generated in the active region, the contact layer disposed between the semiconductor body and the connection layer, wherein a refractive index of the contact layer is matched to a refractive index of the semiconductor body; and (ii) a refractive index of the connection layer is matched to a refractive index of the semiconductor body. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26)
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27. A thin-film semiconductor chip comprising:
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a semiconductor body, which comprises a semiconductor layer sequence comprising an active region provided for generating radiation, a carrier that has a first carrier area facing the semiconductor body and a second carrier area remote from the semiconductor body, the semiconductor body fixed to the carrier by a connection layer, and a plurality of reflective or scattering elements disposed between the second carrier area and the active region, wherein, in top view, the connection layer covers the semiconductor body completely, wherein the plurality of reflective or scattering elements comprise an interface having a surface structure at least in regions, the connection layer being adjacent to the interface with the surface structure and being integrally formed onto the interface with the surface structure, and wherein the connection layer is between the interface with the surface structure and the active region of the semiconductor body. - View Dependent Claims (28, 29)
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30. A semiconductor chip comprising:
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a semiconductor body, which comprises a semiconductor layer sequence comprising an active region provided for generating radiation, a carrier that has a first carrier area facing the semiconductor body and a second carrier area remote from the semiconductor body, the semiconductor body fixed to the carrier by a connection layer, and a plurality of reflective or scattering elements disposed between the second carrier area and the active region, wherein the plurality of reflective or scattering elements comprise an interface having a surface structure at least in regions, the surface structure of the interface comprising a structured surface, wherein the structured surface is arranged between the connection layer and the second carrier area. - View Dependent Claims (31)
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32. A semiconductor chip comprising:
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a semiconductor body, which comprises a semiconductor layer sequence comprising an active region provided for generating radiation, a carrier that has a first carrier area facing the semiconductor body and a second carrier area remote from the semiconductor body, the semiconductor body fixed to the carrier by a connection layer, a plurality of reflective or scattering elements disposed between the second carrier area and the active region, wherein the plurality of reflective or scattering elements comprise an interface having a surface structure at least in regions, the surface structure of the interface comprising a structured surface, wherein the structured surface comprises structure elements that are arranged periodically, and wherein a lateral extent of the structure elements lies between 0.5 times, inclusive, and 100 times, inclusive, a peak wavelength of the radiation generated in the active region in a medium that is adjacent to the interface with the surface structure and facing the active region, and a contact layer transmissive to radiation generated in the active region, the contact layer disposed between the semiconductor body and the connection layer, wherein the structured surface comprises an area of the contact layer that faces the carrier.
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33. A thin-film semiconductor chip comprising:
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a semiconductor body, which comprises a semiconductor layer sequence comprising an active region provided for generating radiation, a carrier that has a first carrier area facing the semiconductor body and a second carrier area remote from the semiconductor body, the semiconductor body fixed to the carrier by an electrically insulating connection layer, and a plurality of reflective or scattering elements disposed between the second carrier area and the active region, wherein, in top view, the connection layer covers the semiconductor body completely. - View Dependent Claims (34)
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Specification