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Method and structure of monolithetically integrated inertial sensor using IC foundry-compatible processes

  • US 8,432,005 B2
  • Filed: 06/12/2012
  • Issued: 04/30/2013
  • Est. Priority Date: 06/25/2008
  • Status: Active Grant
First Claim
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1. A monolithic MEMS and CMOS integrated circuit device comprising:

  • a first semiconductor substrate having a first surface region;

    one or more CMOS integrated circuit devices provided on a CMOS integrated circuit device region overlying the first surface region, the CMOS integrated circuit device region having a CMOS surface region;

    a dielectric region overlying the CMOS surface region, the dielectric region having a cavity region provided therein;

    a second semiconductor substrate having a second surface region overlying the dielectric region and enclosing the cavity region, the second semiconductor substrate having a spring region overlying a vicinity of the cavity region;

    a first piezo resistor device provided within a first portion of the spring region of the second semiconductor substrate;

    a second piezo resistor device provided within a second portion of the spring region of the second semiconductor substrate; and

    a mass of material coupled to a portion of the spring region of the second semiconductor substrate between the second piezo resistor device and the first piezo resistor device, the mass material being overlying the cavity region and coupled to the spring region to be movable from at least a first position to a second position and to be sensed respectively by either or both the first piezo resistor device and the second piezo resistor device.

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