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Through-silicon via structure and a process for forming the same

  • US 8,432,038 B2
  • Filed: 05/20/2010
  • Issued: 04/30/2013
  • Est. Priority Date: 06/12/2009
  • Status: Active Grant
First Claim
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1. A device, comprising:

  • a semiconductor substrate having a front surface and a back surface and including an integrated circuit (IC) component formed on the front surface;

    an interlayer dielectric (ILD) layer formed overlying the front surface of the semiconductor substrate;

    a contact plug formed in the ILD layer and electrically coupled to the IC component; and

    a via structure formed in the ILD layer and extending through the semiconductor substrate, wherein the via structure comprises a metal layer, a metal seed layer surrounding the metal layer, a barrier layer surrounding the metal seed layer, and a metal silicide layer sandwiched between at least a portion of the metal layer and at least a portion of the metal seed layer.

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