Invalid write prevention for STT-MRAM array
First Claim
1. A Spin Transfer Torque Magnetoresistive Random Access Memory (STT-MRAM) comprising:
- a bit cell array having a first source line substantially parallel to a word line coupled to first bit cells, wherein the first source line is substantially perpendicular to bit lines coupled to the first bit cells; and
a source line control unit coupled to the bit cell array, the source line control unit including a common source line driver coupled to a plurality of source lines including the first source line and a source line selector configured to select individual ones of the plurality of source lines, the source line driver and the source line selector coupled in multiplexed relation.
1 Assignment
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Accused Products
Abstract
In a Spin Transfer Torque Magnetoresistive Random Access Memory (STT-MRAM) a bit cell array can have a source line substantially parallel to a word line. The source line can be substantially perpendicular to bit lines. A source line control unit includes a common source line driver and a source line selector configured to select individual ones of the source lines. The source line driver and source line selector can be coupled in multiplexed relation. A bit line control unit includes a common bit line driver and a bit line selector in multiplexed relation. The bit line control unit includes a positive channel metal oxide semiconductor (PMOS) element coupled between the common source line driver and bit line select lines and bit lines.
83 Citations
11 Claims
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1. A Spin Transfer Torque Magnetoresistive Random Access Memory (STT-MRAM) comprising:
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a bit cell array having a first source line substantially parallel to a word line coupled to first bit cells, wherein the first source line is substantially perpendicular to bit lines coupled to the first bit cells; and a source line control unit coupled to the bit cell array, the source line control unit including a common source line driver coupled to a plurality of source lines including the first source line and a source line selector configured to select individual ones of the plurality of source lines, the source line driver and the source line selector coupled in multiplexed relation. - View Dependent Claims (2, 3, 4, 6, 7, 8, 9, 10, 11)
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5. The STT-MRAM of claim it, wherein the source line control unit includes a plurality of positive channel metal oxide semiconductor (PMOS) elements.
Specification