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Multi-column addressing mode memory system including an integrated circuit memory device

  • US 8,432,766 B2
  • Filed: 03/01/2012
  • Issued: 04/30/2013
  • Est. Priority Date: 09/30/2004
  • Status: Active Grant
First Claim
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1. A memory device, comprising:

  • a request interconnect operable to receive commands from a master device;

    first, second, third and fourth storage arrays;

    a first data interconnect operable to output data to the master device from the first and third storage arrays;

    a second data interconnect operable to output data to the master device from the second and fourth storage arrays;

    row access circuitry operable to open a corresponding row in each of the first and fourth storage arrays in response to a first common row access command received at the request interconnect, and to open a corresponding row in each of the second and third storage arrays in response to a second common row access command received at the request interconnect; and

    column access circuitry operable to access first data in the opened row in the first storage array according to a first externally-supplied column address, second data in the opened row in the second storage array according to a second externally-supplied column address, third data in the opened row in the third storage array according to a third externally-supplied column address, and fourth data in the opened row in the fourth storage array according to a fourth externally-supplied column address;

    where a minimum time interval comprising a minimum number of clock cycles must elapse between successive accesses to a same open row of storage cells in one of the first, second, third or fourth storage arrays, where the first data and fourth data are output via the respective data interconnects separated by less than the minimum time interval, and where the second data and the third data are output via the respective data interconnects separated by less than the minimum time interval.

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