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Hermetic wafer-to-wafer bonding with electrical interconnection

  • US 8,433,402 B2
  • Filed: 04/28/2011
  • Issued: 04/30/2013
  • Est. Priority Date: 04/28/2010
  • Status: Active Grant
First Claim
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1. A method for forming an integrated circuit for an implantable medical device comprising:

  • forming a first via in a first side of a first substrate;

    forming a first conductive pad in the first via, wherein an exposed top surface of the first conductive pad is lower than a top surface of the first via;

    forming a second via in a first side of a second substrate;

    forming a second conductive pad in the second via, wherein an exposed top surface of the second conductive pad is lower than a top surface of the second via;

    reflowing the first and second conductive pads to form a single reflowed interconnect that completely fills a gap between the first and second via, wherein the first conductive pad comprising;

    forming a first conductive material on a thermal oxide material; and

    forming a second conductive material over the first conductive material.

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