Surfaces and coatings for the removal of carbon dioxide

• US 8,435,446 B2
• Filed: 01/24/2011
• Issued: 05/07/2013
• Est. Priority Date: 07/25/2007
• Status: Expired due to Fees

• Current Assignee: Howmet Aerospace, Inc.
• Original Assignee: Alcoa Incorporated (Howmet Aerospace, Inc.)
• Inventors: Skiles, Jean Ann, Kolek, Paula L., Davis, Carroll D., Askin, Albert L., Speer, Robert J., Xu, Weizong, Barrage, Lori A., Bergstrom, Verne, Espinoza, Luis H.
• Primary Examiner(s): Yoo, Regina M.
• Application Number:
  US13/012,200
• Publication Number:
  US 20110176982A1
• Time in Patent Office: 834 Days
• Field of Search: 422/5, 422/28, 422/30, 422/120, 422/122, 422/4
• US Class Current: 422/4
• CPC Class Codes: B01D 2255/20707 Titanium
• CPC Class Codes: B01D 2255/802 Photocatalytic
• CPC Class Codes: B01D 2257/504 Carbon dioxide
• CPC Class Codes: B01D 53/62 Carbon oxides
• CPC Class Codes: B01D 53/864 Removing carbon monoxide or hydrocarbons
• CPC Class Codes: B01D 53/88 Handling or mounting catalysts
• CPC Class Codes: B01J 35/39 Photocatalytic properties
• CPC Class Codes: C08K 3/22 of metals
• CPC Class Codes: C09D 1/00 Coating compositions, e.g. paints, varnishes or lacquers, based on inorganic substances
• CPC Class Codes: C09D 7/61 inorganic
• CPC Class Codes: C09D 7/67 Particle size smaller than 100 nm
• CPC Class Codes: C09D 7/68 Particle size between 100-1000 nm
• CPC Class Codes: Y02C 20/40 of CO2
• CPC Class Codes: Y02P 20/151 Reduction of greenhouse gas [GHG] emissions, e.g. CO2

Abstract

Apparatus suited for removing carbon dioxide from gases are disclosed. The apparatus may employ bodies having a photocatalytic film. Associated methods and compositions are also disclosed.

Claims

1. A method comprising:

flowing an incoming gas stream comprising carbon dioxide through a gas scrubbing apparatus comprising a photocatalytic film, wherein the photocatalytic film comprises;

a matrix;

semiconductor particles within the matrix; and

a charge transfer agent within the matrix;

wherein at least some of the semiconductor particles are separate from at least some of the charge transfer agent; and

removing, via the photocatalytic film, at least 10 ppm/minute carbon dioxide from the incoming gas stream.

2. The method of claim 1, wherein the carbon dioxide is removed from the incoming gas stream at a rate of at least 0.5 vol. % per hour.

3. The method of claim 1, wherein the flowing and removing steps occur at ambient conditions.

4. The method of claim 3, wherein the incoming gas stream has a first concentration of carbon dioxide, wherein the method comprises:

discharging an effluent gas stream from the gas scrubbing apparatus, wherein the effluent gas stream has a second concentration of carbon dioxide, wherein the second concentration of carbon dioxide in the effluent gas stream is at least 1% less than the first concentration of carbon dioxide in the incoming gas stream.

5. The method of claim 4, wherein the second concentration of the carbon dioxide in the effluent gas stream is at least 5% less than the first concentration of the carbon dioxide in the incoming gas stream.

6. The method of claim 1, wherein the matrix has a ratio of the semiconductor particles to the charge transfer agent of from 1:

1 to 100;

1 (semiconductor particles;

charge transfer agent).

7. The method of claim 6, wherein the ratio of the semiconductor particles to the charge transfer agent is at least 5:

1 (semiconductor particles;

charge transfer agent).

8. The method of claim 6, wherein the ratio of the semiconductor particles to the charge transfer agent is at least 10:

1 (semiconductor particles;

charge transfer agent).

9. The method of claim 6, wherein the ratio of the semiconductor particles to the charge transfer agent is not greater than 75:

1 (semiconductor particles;

charge transfer agent).

10. The method of claim 6, wherein the ratio of the semiconductor particles to the charge transfer agent is not greater than 50:

1 (semiconductor particles;

charge transfer agent).

11. The method of claim 6, wherein the ratio of the semiconductor particles to the charge transfer agent is not greater than 25:

1 (semiconductor particles;

charge transfer agent).

12. The method of claim 6, wherein the charge transfer agent is based on a hydroxide of sodium.

13. A method comprising:

contacting a body comprising a photocatalytic film with a carbon dioxide-containing gas, wherein the photocatalytic film comprises;

a matrix;

semiconductor particles within the matrix; and

a charge transfer agent within the matrix;

wherein at least some of the semiconductor particles are separate from at least some of the charge transfer agent; and

converting, via the body, at least 10 ppm/minute carbon dioxide to non-carbon dioxide products per square meter of photocatalytic film surface area.

14. The method of claim 13, wherein the converting step comprises:

reacting, in the presence of light, the carbon dioxide-containing gas with at least one of the semiconductor particles and the charge transfer agent to produce a non-carbon dioxide product.

15. The method of claim 13, wherein the converting step occurs at ambient conditions.

16. The method of claim 15, wherein the converting step comprises:

producing a carbonate-containing end product via a receptor agent.

17. The method of claim 16, wherein the charge transfer agent comprises a first alkaline material;

and

wherein the receptor agent comprises a second alkaline material, different than the first alkaline material.

18. The method of claim 17, wherein the first alkaline material comprises sodium and the second alkaline material comprises calcium.

19. The method of claim 13, wherein the matrix has a ratio of the semiconductor particles to the charge transfer agent of from 1:

1 to 100;

1 (semiconductor particles;

charge transfer agent).

20. The method of claim 19, wherein the ratio of the semiconductor particles to the charge transfer agent is at least 5:

1 (semiconductor particles;

charge transfer agent).

21. The method of claim 19, wherein the ratio of the semiconductor particles to the charge transfer agent is at least 10:

1 (semiconductor particles;

charge transfer agent).

22. The method of claim 19, wherein the ratio of the semiconductor particles to the charge transfer agent is not greater than 75:

1 (semiconductor particles;

charge transfer agent).

23. The method of claim 19, wherein the ratio of the semiconductor particles to the charge transfer agent is not greater than 50:

1 (semiconductor particles;

charge transfer agent).

24. The method of claim 19, wherein the ratio of the semiconductor particles to the charge transfer agent is not greater than 25:

1 (semiconductor particles;

charge transfer agent).

25. The method of claim 19, wherein the charge transfer agent is based on a hydroxide of sodium.

26. The method of claim 13, wherein the converting step comprises converting at least 25 ppm/minute carbon dioxide to non-carbon dioxide products per square meter of photocatalytic film surface area.

27. The method of claim 13, wherein the converting step comprises converting at least 100 ppm/minute carbon dioxide to non-carbon dioxide products per square meter of photocatalytic film surface area.

28. The method of claim 13, wherein the converting step comprises converting at least 250 ppm/minute carbon dioxide to non-carbon dioxide products per square meter of photocatalytic film surface area.

29. The method of claim 13, wherein the converting step comprises converting at least 500 ppm/minute carbon dioxide to non-carbon dioxide products per square meter of photocatalytic film surface area.

30. The method of claim 13, wherein the converting step comprises converting at least 600 ppm/minute carbon dioxide to non-carbon dioxide products per square meter of photocatalytic film surface area.

31. A method comprising:

contacting a body comprising a photocatalytic film with a carbon dioxide-containing gas, wherein the photocatalytic film comprises;

a matrix;

semiconductor particles within the matrix; and

a charge transfer agent within the matrix; and

converting, via the body, at least 10 ppm/minute carbon dioxide to non-carbon dioxide products per square meter of photocatalytic film surface area;

wherein the converting step occurs at ambient conditions; and

wherein the converting step comprises producing a carbonate-containing end product via a receptor agent.

32. The method of claim 31, wherein the converting step comprises:

reacting, in the presence of light, the carbon dioxide-containing gas with at least one of the particles semiconductor particles and the charge transfer agent to produce a non-carbon dioxide product.

33. The method of claim 31, wherein the charge transfer agent is a first alkaline material and wherein the receptor agent comprises a second alkaline material, different than the first alkaline material.

34. The method of claim 33, wherein the first alkaline material comprises sodium and the second alkaline material comprises calcium.

35. The method of claim 31, wherein at least some of the semiconductor particles are separate from at least some of the charge transfer agent.

36. The method of claim 31, wherein the matrix has a ratio of the semiconductor particles to the charge transfer agent of from 1:

1 to 100;

1 (semiconductor particles;

charge transfer agent).

37. The method of claim 36, wherein the ratio of the semiconductor particles to the charge transfer agent is at least 5:

1 (semiconductor particles;

charge transfer agent).

38. The method of claim 36, wherein the ratio of the semiconductor particles to the charge transfer agent is at least 10:

1 (semiconductor particles;

charge transfer agent).

39. The method of claim 36, wherein the ratio of the semiconductor particles to the charge transfer agent is not greater than 75:

1 (semiconductor particles;

charge transfer agent).

40. The method of claim 36, wherein the ratio of the semiconductor particles to the charge transfer agent is not greater than 50:

1 (semiconductor particles;

charge transfer agent).

41. The method of claim 36, wherein the ratio of the semiconductor particles to the charge transfer agent is not greater than 25:

1 (semiconductor particles;

charge transfer agent).

42. The method of claim 36, wherein the charge transfer agent is based on a hydroxide of sodium.

43. The method of claim 31, wherein the converting step comprises converting at least 25 ppm/minute carbon dioxide to non-carbon dioxide products per square meter of photocatalytic film surface area.

44. The method of claim 31, wherein the converting step comprises converting at least 100 ppm/minute carbon dioxide to non-carbon dioxide products per square meter of photocatalytic film surface area.

45. The method of claim 31, wherein the converting step comprises converting at least 250 ppm/minute carbon dioxide to non-carbon dioxide products per square meter of photocatalytic film surface area.

46. The method of claim 31, wherein the converting step comprises converting at least 500 ppm/minute carbon dioxide to non-carbon dioxide products per square meter of photocatalytic film surface area.

47. The method of claim 31, wherein the converting step comprises converting at least 600 ppm/minute carbon dioxide to non-carbon dioxide products per square meter of photocatalytic film surface area.