Bulk sulfide species treatment of thin film photovoltaic cell and manufacturing method
First Claim
1. A method for forming a thin film photovoltaic device, the method comprising:
- providing a transparent substrate comprising a surface region;
forming a first electrode layer overlying the surface region;
forming a copper layer overlying the first electrode layer;
forming an indium layer overlying the copper layer to form a multi-layered structure;
subjecting at least the multi-layered structure to a thermal treatment process in an environment containing a sulfur bearing species;
forming a bulk copper indium disulfide material from at least the treatment process of the multi-layered structure, the bulk copper indium disulfide material comprising one or more portions of copper poor copper indium disulfide material characterized by a copper-to-indium atomic ratio of less than about 0.95;
1 and the bulk copper indium disulfide material having a surface region characterized by a copper poor surface comprising a copper to indium atomic ratio of less than about 0.95;
1, the bulk copper indium disulfide material comprising one or more portions of a sulfur deficient copper indium disulfide material characterized by at least a CuInS2-x species, where 0<
x<
2, and the bulk copper indium disulfide material having a sulfur deficient surface region characterized by the CuInS2-x, species, where 0<
x<
2, from at least the heat treatment process;
subjecting the copper poor surface, one or more portions of the copper poor copper indium disulfide material to a sodium species derived from a sodium sulfide material to convert the copper poor surface from an n-type characteristic to a p-type characteristic, to convert any of the one or more portions of the copper poor copper indium disulfide material having the copper-to-indium atomic ratio of less than about 0.95;
1 from an n-type characteristic to a p-type characteristic;
subjecting the one or more portions of the sulfur deficient copper indium disulfide material and the sulfur deficient surface region to a sulfur species derived form the sodium sulfide material to improve a conversion efficiency characteristic; and
forming a window layer overlying the copper indium disulfide material;
whereupon the subjecting of the copper poor surface, the sulfur deficient surface, the one or more portions of the copper poor copper indium disulfide material, and the sulfur deficient copper indium disulfide material is performed during at least a thermal treatment process for a time period.
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Accused Products
Abstract
A method for forming a thin film photovoltaic device. The method includes providing a transparent substrate comprising a surface region and forming a first electrode layer overlying the surface region. The method forms a bulk copper indium disulfide material from a multi-layered structure comprising a copper species, an indium species, and a sulfur species overlying the first electrode layer. The bulk copper indium disulfide material comprises one or more portions of a copper poor copper indium disulfide material, a copper poor surface regions, and one or more portions of a sulfur deficient copper indium disulfide material characterized by at least a CuInS2-x species, where 0<x<2. The copper poor surface and one or more portions of the copper poor copper indium disulfide material are subjected to a sodium species derived from a sodium sulfide material to convert the copper poor surface from an n-type characteristic to a p-type characteristic. The method also subjects the one or more portions of the sulfur deficient copper indium disulfide material to a sulfur species derived form the sodium sulfide material to improve a conversion efficiency characteristic of the photovoltaic device. A window layer is formed overlying the copper indium disulfide material.
222 Citations
21 Claims
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1. A method for forming a thin film photovoltaic device, the method comprising:
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providing a transparent substrate comprising a surface region; forming a first electrode layer overlying the surface region; forming a copper layer overlying the first electrode layer; forming an indium layer overlying the copper layer to form a multi-layered structure; subjecting at least the multi-layered structure to a thermal treatment process in an environment containing a sulfur bearing species; forming a bulk copper indium disulfide material from at least the treatment process of the multi-layered structure, the bulk copper indium disulfide material comprising one or more portions of copper poor copper indium disulfide material characterized by a copper-to-indium atomic ratio of less than about 0.95;
1 and the bulk copper indium disulfide material having a surface region characterized by a copper poor surface comprising a copper to indium atomic ratio of less than about 0.95;
1, the bulk copper indium disulfide material comprising one or more portions of a sulfur deficient copper indium disulfide material characterized by at least a CuInS2-x species, where 0<
x<
2, and the bulk copper indium disulfide material having a sulfur deficient surface region characterized by the CuInS2-x, species, where 0<
x<
2, from at least the heat treatment process;subjecting the copper poor surface, one or more portions of the copper poor copper indium disulfide material to a sodium species derived from a sodium sulfide material to convert the copper poor surface from an n-type characteristic to a p-type characteristic, to convert any of the one or more portions of the copper poor copper indium disulfide material having the copper-to-indium atomic ratio of less than about 0.95;
1 from an n-type characteristic to a p-type characteristic;subjecting the one or more portions of the sulfur deficient copper indium disulfide material and the sulfur deficient surface region to a sulfur species derived form the sodium sulfide material to improve a conversion efficiency characteristic; and forming a window layer overlying the copper indium disulfide material; whereupon the subjecting of the copper poor surface, the sulfur deficient surface, the one or more portions of the copper poor copper indium disulfide material, and the sulfur deficient copper indium disulfide material is performed during at least a thermal treatment process for a time period. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19)
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20. A method for forming a thin film photovoltaic device, the method comprising:
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providing a transparent substrate comprising a surface region; forming a first electrode layer overlying the surface region; forming a chalcopyrite material overlying the electrode layer, the chalcopyrite material comprises a copper poor copper indium disulfide region and a sulfur deficient copper indium disulfide region, the copper poor copper indium disulfide region having an atomic ratio of Cu;
In of about 0.99 and less, the sulfur deficient copper indium disulfide region comprising a CuInS2-x, species, where 2>
x>
0;compensating the copper poor copper indium disulfide region using a sodium species to change in characteristic from an n-type to a p-type compensating the sulfur deficient copper indium disulfide region using a sulfide species to improve a characteristic of conversion efficiency; forming a window layer overlying the chalcopyrite material; and forming a second electrode layer overlying the window layer.
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21. A method for forming a thin film photovoltaic device, the method comprising:
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providing a transparent substrate comprising a surface region; forming a first electrode layer overlying the surface region; forming a copper containing layer overlying the first electrode layer; forming an indium containing layer overlying the copper containing layer to form a multi-layered structure; subjecting at least the multi-layered structure to a thermal treatment process in an environment containing a sulfur bearing species; forming a bulk copper indium disulfide containing material from at least the thermal treatment process of the multi-layered structure, the bulk copper indium disulfide containing material comprising one or more portions of a sulfur deficient copper indium disulfide containing material characterized by at least a CuInS2-x species, where 0<
x<
2;subjecting the one or more portions of the sulfur deficient copper indium disulfide containing material to a sulfur species derived from a sulfur bearing material to improve a device characteristic from a first value to a second value; and forming a window layer overlying the copper indium disulfide material.
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Specification