Trench type semiconductor device and fabrication method for the same
First Claim
1. A fabrication method for a trench type semiconductor device comprising:
- forming a first base layer of a first conductivity type with high resistivity;
forming a gate insulating film on a bottom surface and a sidewall surface of a trench formed from a surface of the first base layer;
forming the gate electrode for filling up into the trench on the gate insulating film;
forming an impurity layer on an upper part of the gate electrode;
forming an interlayer insulating film so as to cover the gate electrode;
forming a second base layer of a second conductivity type on the surface of the first base layer formed more shallowly than the bottom surface of the trench;
forming a first main electrode layer of the first conductivity type on a surface of the second base layer;
forming a first main electrode which passes through the first main electrode layer by applying the interlayer insulating film as a mask, is connected to the second base layer in the bottom surface of a self-aligned contact trench formed in the second base layer, and is connected to the first main electrode layer in a sidewall surface of the self-aligned contact trench;
forming a second main electrode layer at a back side of the first base layer; and
forming a second main electrode at the second main electrode layer.
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Abstract
A fabrication method for a trench type semiconductor device includes: forming a first base layer; forming a gate insulating film on a bottom and sidewall surfaces of a trench; forming a gate electrode for filling up into the trench; covering the gate electrode and forming an interlayer insulating film; forming a second base layer on the first base layer; forming a first main electrode layer on the second base layer; forming a first main electrode which passes through the first main electrode layer by applying the interlayer insulating film as a mask, is connected to the second base layer in the bottom surface of a self-aligned contact trench, and is connected to the first main electrode layer of the self-aligned contact trench; forming a second main electrode layer at a back side of the first base layer; and forming a second main electrode at the second main electrode layer.
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Citations
13 Claims
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1. A fabrication method for a trench type semiconductor device comprising:
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forming a first base layer of a first conductivity type with high resistivity; forming a gate insulating film on a bottom surface and a sidewall surface of a trench formed from a surface of the first base layer; forming the gate electrode for filling up into the trench on the gate insulating film; forming an impurity layer on an upper part of the gate electrode; forming an interlayer insulating film so as to cover the gate electrode; forming a second base layer of a second conductivity type on the surface of the first base layer formed more shallowly than the bottom surface of the trench; forming a first main electrode layer of the first conductivity type on a surface of the second base layer; forming a first main electrode which passes through the first main electrode layer by applying the interlayer insulating film as a mask, is connected to the second base layer in the bottom surface of a self-aligned contact trench formed in the second base layer, and is connected to the first main electrode layer in a sidewall surface of the self-aligned contact trench; forming a second main electrode layer at a back side of the first base layer; and forming a second main electrode at the second main electrode layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
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Specification