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Trench type semiconductor device and fabrication method for the same

  • US 8,435,860 B2
  • Filed: 04/30/2012
  • Issued: 05/07/2013
  • Est. Priority Date: 07/29/2008
  • Status: Active Grant
First Claim
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1. A fabrication method for a trench type semiconductor device comprising:

  • forming a first base layer of a first conductivity type with high resistivity;

    forming a gate insulating film on a bottom surface and a sidewall surface of a trench formed from a surface of the first base layer;

    forming the gate electrode for filling up into the trench on the gate insulating film;

    forming an impurity layer on an upper part of the gate electrode;

    forming an interlayer insulating film so as to cover the gate electrode;

    forming a second base layer of a second conductivity type on the surface of the first base layer formed more shallowly than the bottom surface of the trench;

    forming a first main electrode layer of the first conductivity type on a surface of the second base layer;

    forming a first main electrode which passes through the first main electrode layer by applying the interlayer insulating film as a mask, is connected to the second base layer in the bottom surface of a self-aligned contact trench formed in the second base layer, and is connected to the first main electrode layer in a sidewall surface of the self-aligned contact trench;

    forming a second main electrode layer at a back side of the first base layer; and

    forming a second main electrode at the second main electrode layer.

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