Method for reclaiming a surface of a substrate
First Claim
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1. A method for reclaiming a surface of a substrate, wherein a surface comprises a protruding residual topography resulting from a layer transfer process, wherein the substrate comprises at least a layer of a first material, the method comprising the steps of:
- a) providing a silicon filling material only in the non-protruding areas of the surface of the substrate, andb) polishing the surface,wherein the filling material and the protruding residual topography are polished simultaneously during polishing step b), andthe protruding residual topography is completely removed during polishing step b).
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Abstract
A method for reclaiming a surface of a substrate, wherein the surface, in particular a silicon surface, comprises a protruding residual topography, comprising at least the layer of a first material. By providing a filling material in the non-protruding areas of the surface of the substrate and the subsequent polishing, the reclaiming can be carried out such that the material consuming double-sided polishing step used in the prior art is no longer necessary.
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16 Claims
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1. A method for reclaiming a surface of a substrate, wherein a surface comprises a protruding residual topography resulting from a layer transfer process, wherein the substrate comprises at least a layer of a first material, the method comprising the steps of:
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a) providing a silicon filling material only in the non-protruding areas of the surface of the substrate, and b) polishing the surface, wherein the filling material and the protruding residual topography are polished simultaneously during polishing step b), and the protruding residual topography is completely removed during polishing step b). - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16)
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Specification