Manufacturing method of semiconductor device, and substrate processing apparatus
First Claim
1. A manufacturing method of a semiconductor device, comprising:
- loading a substrate into a processing chamber;
forming a thin film having a desired thickness on said substrate by setting the following (a), (b), and (c) sequentially as one cycle;
(a) supplying into said processing chamber an adsorption auxiliary gas for aiding an adsorption of a source gas vaporized from a liquid source on said substrate by reacting with a ligand of said source gas and decomposing said ligand, and causing said adsorption auxiliary gas to be adsorbed on said substrate;
(b) supplying said source gas into said processing chamber, causing said ligand of said source gas to react with said adsorption auxiliary gas adsorbed on said substrate and be decomposed, causing said adsorption auxiliary gas to be removed from said substrate, and causing said source gas to be adsorbed on said substrate; and
(c) supplying a reaction gas into said processing chamber and causing this reaction gas to react with said source gas adsorbed on said substrate,the cycle being repeated a plurality of times; and
unloading said substrate provided with said thin film from the inside of said processing chamber.
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Abstract
The present invention provides a manufacturing method of a semiconductor device that has a rapid film formation rate and high productivity, and to provide a substrate processing apparatus.
The method comprises the steps of loading a substrate into a processing chamber; forming a thin film having a desired thickness on the substrate by setting as one cycle the step of supplying into the processing chamber adsorption auxiliary gas for aiding an adsorption of a source gas vaporized from a liquid source on the substrate and causing this adsorption auxiliary gas to be adsorbed on the substrate, the step of supplying the source gas into the processing chamber, causing the source gas to react with the adsorption auxiliary gas on the substrate, and causing this source gas to be adsorbed on the substrate, and the step of supplying a reaction gas into the processing chamber and causing this reaction gas to react with the source gas adsorbed on the substrate, and repeating this cycle a plurality of times; and unloading the substrate provided with the thin film from the inside of the processing chamber.
7 Citations
13 Claims
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1. A manufacturing method of a semiconductor device, comprising:
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loading a substrate into a processing chamber; forming a thin film having a desired thickness on said substrate by setting the following (a), (b), and (c) sequentially as one cycle; (a) supplying into said processing chamber an adsorption auxiliary gas for aiding an adsorption of a source gas vaporized from a liquid source on said substrate by reacting with a ligand of said source gas and decomposing said ligand, and causing said adsorption auxiliary gas to be adsorbed on said substrate; (b) supplying said source gas into said processing chamber, causing said ligand of said source gas to react with said adsorption auxiliary gas adsorbed on said substrate and be decomposed, causing said adsorption auxiliary gas to be removed from said substrate, and causing said source gas to be adsorbed on said substrate; and (c) supplying a reaction gas into said processing chamber and causing this reaction gas to react with said source gas adsorbed on said substrate, the cycle being repeated a plurality of times; and unloading said substrate provided with said thin film from the inside of said processing chamber. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A manufacturing method of a semiconductor device, comprising:
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loading a substrate into a processing chamber; forming a thin film having a desired thickness on said substrate by setting the following (a), (b), and (c) sequentially as one cycle; (a) supplying into said processing chamber a gas containing oxygen atoms and for aiding adsorption of a source gas vaporized from a liquid source by reacting with a ligand of said source gas and decomposing said ligand, and causing said gas containing oxygen atoms to be adsorbed on said substrate; (b) supplying into said processing chamber said source gas, causing said ligand of said source gas to react with said gas containing oxygen atoms adsorbed on said substrate and be decomposed, causing said gas containing oxygen atoms to be removed from said substrate, and causing this source gas to be adsorbed on said substrate; and (c) supplying into said processing chamber a reaction gas not containing oxygen atoms and causing this reaction gas to react with said source gas adsorbed on said substrate, the cycle being repeated a plurality of times; and unloading said substrate provided with said thin film from the inside of said processing chamber.
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12. A manufacturing method of a semiconductor device, comprising:
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loading a substrate into a processing chamber; forming a thin film having a prescribed thickness as an initial film on said substrate by setting the following (a) and (b) sequentially as a first cycle; (a) supplying into said processing chamber a source gas vaporized from a liquid source and causing this source gas to be adsorbed on said substrate; and (b) supplying a reaction gas into said processing chamber and causing this reaction gas to react with said source gas adsorbed on said substrate; the first cycle being repeated a plurality of times; forming a thin film having a desired thickness on said thin film having the prescribed thickness formed in forming the thin film having a prescribed thickness as the initial film, by setting the following (c), (d), and (e) sequentially as a second cycle; (c) supplying into said processing chamber an adsorption auxiliary gas for aiding an adsorption of said source gas on said substrate by reacting with a ligand of said source gas and decomposing said ligand, and causing said adsorption auxiliary gas to be adsorbed on said substrate; (d) supplying said source gas into said processing chamber, causing said ligand of said source gas to react with said adsorption auxiliary gas adsorbed on said substrate and be decomposed, causing said adsorption auxiliary gas to be removed from said substrate, and causing said source gas to be adsorbed on said substrate; and (e) supplying said reaction gas into said processing chamber and causing this reaction gas to react with said source gas adsorbed on said substrate, the second cycle being repeated a plurality of times; and unloading said substrate provided with said thin film from the inside of said processing chamber.
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13. A substrate processing apparatus, comprising:
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a processing chamber in which a substrate is processed; a source gas supply line that supplies into said processing chamber a source gas vaporized from a liquid source; a reaction gas supply line that supplies into said processing chamber a reaction gas that reacts with said source gas; an adsorption auxiliary gas supply line that supplies into said processing chamber an adsorption auxiliary gas for aiding an adsorption of said source gas on said substrate by reacting with a ligand of said source gas and decomposing said ligand; and a controller that is configured to carry out control for forming a thin film having a desired thickness on said substrate by setting the following (a), (b), and (c) sequentially as one cycle; (a) supplying said adsorption auxiliary gas into said processing chamber and causing this adsorption auxiliary gas to be adsorbed on said substrate; (b) supplying said source gas into said processing chamber, causing said ligand of said source gas to react with said adsorption auxiliary gas adsorbed on said substrate and be decomposed, causing said adsorption auxiliary gas to be removed from said substrate, and causing said source gas to be adsorbed on said substrate; and (c) supplying said reaction gas into said processing chamber and causing this reaction gas to react with said source gas adsorbed on said substrate, the cycle being repeated a plurality of times.
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Specification