Thin-film transistor fabrication process and display device

• US 8,436,349 B2
• Filed: 02/18/2008
• Issued: 05/07/2013
• Est. Priority Date: 02/20/2007
• Status: Active Grant

• Current Assignee: Canon Kabushiki Kaisha (Canon Inc.)
• Original Assignee: Canon Kabushiki Kaisha (Canon Inc.)
• Inventors: Sano, Masafumi, Hayashi, Ryo
• Primary Examiner(s): Tran, Tony
• Application Number:
  US12/524,138
• Publication Number:
  US 20100044701A1
• Time in Patent Office: 1,905 Days
• Field of Search: 438/149, 438/151, 438/157, 438/166, 257/43, 257/E33.019
• US Class Current: 257/43
• CPC Class Codes: H01L 27/1225 with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate

Abstract

In a process for fabricating a thin-film transistor in which a gate electrode 4 is to be formed on a substrate 1, the process has the steps of forming the gate electrode 4 on the substrate 1, forming a metal oxide layer 7 in such a way as to cover the gate electrode 4, forming a source electrode 6 and a drain electrode 5, and carrying out annealing in an inert gas to change part of the metal oxide layer 7 into a channel region.

Claims

1. A process for fabricating a thin-film transistor in which a gate electrode is to be formed on a substrate, the process comprising the steps of:

forming the gate electrode on the substrate;

forming a metal oxide layer in such a way as to cover the gate electrode said metal oxide layer comprising Zn and further comprising at least one of In, Ga, Al, Fe, Sn, Mg, Ca, Si, and Ge, having a resistivity of from 10⁸ cm or more to 10¹⁰ Ω

cm or less, and being amorphous;

thereafter

forming a source electrode and a drain electrode;

carrying out heat treatment to the source electrode and the drain electrode at a temperature in the range from 150°

C. to 250°

C. by using any one of an ultraviolet lamp, a visible-light lamp, an infrared lamp, a near infrared lamp, and a far infrared lamp in a gas selected from the group consisting of N₂, Kr, and Xe to change a first part of the metal oxide layer into a channel region,

wherein after the heat treatment, the channel region is amorphous and has a resistivity of from 10 Ω

cm or more to 10⁷ Ω

cm or less;

wherein the heat treatment is subjected to the first part of the metal oxide layer, and wherein the heat treatment is not subjected to a second part of the metal oxide layer; and

wherein the second part of the metal oxide layer is located outside the first part of the metal oxide layer.

2. The process for fabricating a thin-film transistor according to claim 1, wherein the first part of the metal oxide layer comprises a region adjoining the source electrode and the drain electrode.