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Methods of forming light emitting devices having current reducing structures

  • US 8,436,368 B2
  • Filed: 02/27/2012
  • Issued: 05/07/2013
  • Est. Priority Date: 06/30/2004
  • Status: Active Grant
First Claim
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1. A light emitting device, comprising:

  • a p-type semiconductor layer, an n-type semiconductor layer and an active region between the n-type semiconductor layer and the p-type semiconductor layer;

    a non-transparent feature on the n-type semiconductor layer opposite the active region; and

    a patterned ohmic contact on the p-type semiconductor layer opposite the active region, wherein the patterned ohmic contact is aligned with the non-transparent feature.

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