Semiconductor light emitting device and method for manufacturing the same
First Claim
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1. A semiconductor light emitting device, comprising:
- a substrate; and
a light emitting structure on an upper surface of the substrate and comprising a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer between the first conductive semiconductor layer and second conductive semiconductor layer,wherein a bottom surface of the substrate includes a first portion and a second portion around the first portion,wherein the first portion includes a first recess and the second portion includes a second recess,wherein the first recess and the second recess are formed in a direction toward the upper surface from the bottom surface of the substrate, andwherein the first recess and the second recess have a different depth from the bottom surface of the substrate.
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Abstract
Disclosed are a semiconductor light emitting device and a method for manufacturing the same. The semiconductor light emitting device comprises a substrate, in which concave-convex patterns are in at least a portion of a backside of the substrate, and a light emitting structure on the substrate and comprising a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer.
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Citations
19 Claims
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1. A semiconductor light emitting device, comprising:
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a substrate; and a light emitting structure on an upper surface of the substrate and comprising a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer between the first conductive semiconductor layer and second conductive semiconductor layer, wherein a bottom surface of the substrate includes a first portion and a second portion around the first portion, wherein the first portion includes a first recess and the second portion includes a second recess, wherein the first recess and the second recess are formed in a direction toward the upper surface from the bottom surface of the substrate, and wherein the first recess and the second recess have a different depth from the bottom surface of the substrate. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14)
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15. A semiconductor light emitting device, comprising:
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a substrate; a light emitting structure on an upper surface of the substrate and comprising a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer between the first conductive semiconductor layer and second conductive semiconductor layer; and a first semiconductor layer between the substrate and a bottom surface of the light emitting structure, wherein a bottom surface of the substrate includes a first portion and a second portion around the first portion, wherein the first portion includes a first recess and the second portion includes a second recess, wherein the first recess and the second recess are formed in a direction toward the upper surface from the bottom surface of the substrate, and wherein the first recess and the second recess have a different depth from the bottom surface of the substrate. - View Dependent Claims (16, 17, 18, 19)
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Specification