Semiconductor device including transistor provided with sidewall and electronic appliance
First Claim
1. A semiconductor device comprising:
- an oxide semiconductor layer;
a source electrode and a drain electrode in contact with the oxide semiconductor layer;
a sidewall insulating layer under the oxide semiconductor layer;
a gate electrode overlapping with the oxide semiconductor layer; and
a gate insulating layer between the oxide semiconductor layer and the gate electrode,wherein the source electrode or the drain electrode includes a first conductive layer and a second conductive layer, the second conductive layer having a region extended in a channel length direction from an end face of the first conductive layer,wherein a length in the channel length direction of a bottom surface of the sidewall insulating layer is smaller than a length in the channel length direction of the extended region of the second conductive layer, andwherein the sidewall insulating layer is provided over the extended region of the second conductive layer.
1 Assignment
0 Petitions
Accused Products
Abstract
One object is to provide a semiconductor device that includes an oxide semiconductor and is reduced in size with favorable characteristics maintained. The semiconductor device includes an oxide semiconductor layer, a source electrode and a drain electrode in contact with the oxide semiconductor layer, a gate electrode overlapping with the oxide semiconductor layer; and a gate insulating layer between the oxide semiconductor layer and the gate electrode. The source electrode or the drain electrode includes a first conductive layer and a second conductive layer having a region extended in a channel length direction from an end face of the first conductive layer. The sidewall insulating layer has a length of a bottom surface in the channel length direction smaller than a length in the channel length direction of the extended region of the second conductive layer and is provided over the extended region.
122 Citations
18 Claims
-
1. A semiconductor device comprising:
-
an oxide semiconductor layer; a source electrode and a drain electrode in contact with the oxide semiconductor layer; a sidewall insulating layer under the oxide semiconductor layer; a gate electrode overlapping with the oxide semiconductor layer; and a gate insulating layer between the oxide semiconductor layer and the gate electrode, wherein the source electrode or the drain electrode includes a first conductive layer and a second conductive layer, the second conductive layer having a region extended in a channel length direction from an end face of the first conductive layer, wherein a length in the channel length direction of a bottom surface of the sidewall insulating layer is smaller than a length in the channel length direction of the extended region of the second conductive layer, and wherein the sidewall insulating layer is provided over the extended region of the second conductive layer. - View Dependent Claims (2, 3, 4, 5, 6)
-
-
7. A semiconductor device comprising:
-
a plurality of first conductive layers over a substrate; a sidewall insulating layer and a second conductive layer over each of the first conductive layers; an insulating layer over the second conductive layer; an oxide semiconductor layer over the sidewall insulating layer and the insulating layer, a gate insulating layer over the oxide semiconductor layer; and a gate electrode over the gate insulating layer, wherein an edge portion of each of the first conductive layers is covered with the oxide semiconductor layer and a part of the oxide semiconductor layer is interposed between the plurality of first conductive layers, and wherein the gate electrode overlaps the second conductive layer and each of the first conductive layers. - View Dependent Claims (8, 9, 10, 11, 12)
-
-
13. A semiconductor device comprising:
-
a plurality of first conductive layers over a substrate; a sidewall insulating layer and a second conductive layer over each of the first conductive layers; an insulating layer over the second conductive layer; an oxide semiconductor layer over the sidewall insulating layer and the insulating layer, a gate insulating layer over the oxide semiconductor layer; and a gate electrode over the gate insulating layer, wherein an edge portion of each of the first conductive layers is covered with the oxide semiconductor layer and a part of the oxide semiconductor layer is interposed between the plurality of first conductive layers, and wherein the gate electrode overlaps the second conductive layer and each of the first conductive layers, wherein a first side surface of the sidewall insulating layer is in contact with the oxide semiconductor layer, and wherein a second side surface of the sidewall insulating layer is in contact with the insulating layer. - View Dependent Claims (14, 15, 16, 17, 18)
-
Specification